Guoqing Chen

US Patent:

20200328253, Oct 15, 2020

Filed:

Apr 12, 2019

Appl. No.:

16/382904

Inventors:

- San Diego CA, US
Xia Li - San Diego CA, US
Guoqing Chen - San Diego CA, US

International Classification:

H01L 27/24
H01L 45/00
H01L 29/78
G11C 13/00
H01L 29/66
H01L 29/08
H01L 29/51
H01L 21/265

Abstract:

A metal-insulator-semiconductor (MIS) resistive random access memory (RRAM) (MIS RRAM) device and MIS RRAM bit cell circuit are disclosed. A RRAM bit cell includes a RRAM device that can store a memory state and an access transistor to control access to the RRAM device. The RRAM device stores data as an electrical resistance formed in an oxide layer by applying a voltage differential between the top and bottom electrodes through the access transistor to generate an electric field in the oxide layer. This structure is similar to a metal gate formed over a channel region of a transistor. Forming the bottom electrode of the MIS RRAM device in a semiconductor structure may allow the dimensions of the electrodes of the MIS RRAM device to be scaled down to the dimensions of a transistor gate, because the MIS RRAM device structure can be fabricated with the transistor in a compatible process.

US Patent:

20200328350, Oct 15, 2020

Filed:

Apr 12, 2019

Appl. No.:

16/382880

Inventors:

- San Diego CA, US
Xia Li - San Diego CA, US
Guoqing Chen - San Diego CA, US

International Classification:

H01L 45/00
H01L 27/24

Abstract:

An RRAM device is disclosed, having reduced area without increased performance variation, formed by employing a bounded filament formation region in which an oxide layer is thinner and an implanted ion concentration is higher than in a peripheral region of the oxide layer surrounding the bounded filament formation region. Filament formation is controlled to occur in a bounded region having a reduced area by thinning the oxide layer in the bounded region to increase an electric field strength in the bounded region. Defects in the bounded region are subject to greater force from the electric field than defects in the peripheral region. By implanting additional mobile ions or other ion species in the bounded region by an accurately controlled process, a higher concentration of defects is introduced into the bounded region to promote filament formation. Memory elements based on the RRAM device are formed at higher density and lower cost.

US Patent:

20180082776, Mar 22, 2018

Filed:

Sep 16, 2016

Appl. No.:

15/268479

Inventors:

- San Diego CA, US
Guoqing Chen - San Diego CA, US

International Classification:

H01F 27/28
H01F 27/29
H01F 41/04

Abstract:

A partial metal fill is provided within the footprint of an ultra-thick-metal (UTM) conductor on a dielectric layer to strengthen the dielectric layer to inhibit delamination of the UTM conductor without inducing significant electrical coupling between the UTM conductor and the partial metal fill.