Hae Jin Kim

US Patent:

20220415709, Dec 29, 2022

Filed:

Jun 10, 2022

Appl. No.:

17/837518

Inventors:

- San Jose CA, US
Hae Young Kim - San Jose CA, US
Jerry Mack - San Jose CA, US
Jae Seok Heo - Dublin CA, US
Sung-Hoon Jung - Santa Clara CA, US
Somilkumar J. Rathi - San Jose CA, US
Srishti Chugh - San Jose CA, US
Yoshikazu Okuyama - Santa Cruz CA, US
Bunsen B. Nie - Fremont CA, US

International Classification:

H01L 21/768

Abstract:

The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

US Patent:

20220301929, Sep 22, 2022

Filed:

Apr 6, 2022

Appl. No.:

17/714973

Inventors:

- San Jose CA, US
Hae Young Kim - San Jose CA, US
Hyunchol Cho - Milpitas CA, US
Bunsen B. Nie - Fremont CA, US

International Classification:

H01L 21/768

Abstract:

The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method comprises forming a diffusion barrier comprising TiSiN having a modulus exceeding 290 GPa and a Si content exceeding 2.7 atomic % by exposing a semiconductor substrate to one or more first deposition phases alternating with one or more second deposition phases. Exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor. Exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor, followed by a silicon (Si) precursor, followed by the N precursor.

US Patent:

20220216060, Jul 7, 2022

Filed:

Mar 21, 2022

Appl. No.:

17/655751

Inventors:

- San Jose CA, US
Hae Young Kim - San Jose CA, US
Bunsen B. Nie - Fremont CA, US

International Classification:

H01L 21/285
C23C 16/455
C23C 16/34

Abstract:

The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method of forming a thin film comprising titanium nitride (TiN) by a cyclical vapor deposition process comprises forming on a semiconductor substrate a TiN thin film by exposing the semiconductor substrate to one or more cyclical vapor deposition cycles each comprising an exposure to a Ti precursor at a Ti precursor flow rate and an exposure to a NHprecursor at a NHprecursor flow rate, after forming the TiN film, subjecting the semiconductor substrate, without further deposition of the TiN thin film, to a post-deposition exposure of NHat a second NHflow rate.

US Patent:

20210104396, Apr 8, 2021

Filed:

Oct 8, 2019

Appl. No.:

16/595945

Inventors:

- San Jose CA, US
Niloy Mukherjee - San Ramon CA, US
Yoshikazu Okuyama - Santa Cruz CA, US
Bunsen B. Nie - Fremont CA, US
Hae Young Kim - San Jose CA, US
Somilkumar J. Rathi - San Jose CA, US

International Classification:

H01L 21/02
C23C 16/34
H01L 21/28
C23C 16/455

Abstract:

The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method of forming a thin film comprising TiN comprises exposing a semiconductor substrate to one or more first cyclical vapor deposition cycles each comprising an exposure to a first Ti precursor and an exposure to a first N precursor to form a first portion of the thin film and exposing the semiconductor substrate to one or more second cyclical vapor deposition cycles each comprising an exposure to a second Ti precursor and an exposure to a second N precursor to form a second portion of the thin film, wherein exposures to one or both of the first Ti precursor and the first N precursor during the one or more first cyclical vapor deposition cycles are at different pressures relative to corresponding exposures to one or both of the second Ti precursor and the second N precursor during the one or more second cyclical vapor deposition cycles. Aspects are also directed to semiconductor structures incorporating the thin film and method of forming the same.

US Patent:

20210104397, Apr 8, 2021

Filed:

Oct 8, 2019

Appl. No.:

16/595952

Inventors:

- San Jose CA, US
Niloy Mukherjee - San Ramon CA, US
Hee Seok Kim - Seongnam, KR
Kyu Jin Choi - Seongnam, KR
Moonsig Joo - Suwon, KR
Hae Young Kim - San Jose CA, US
Yoshikazu Okuyama - Santa Cruz CA, US
Bunsen B. Nie - Fremont CA, US
Somilkumar J. Rathi - San Jose CA, US

International Classification:

H01L 21/02
C23C 16/455
H01L 21/28
C23C 16/34

Abstract:

The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.

US Patent:

20210104433, Apr 8, 2021

Filed:

Oct 8, 2019

Appl. No.:

16/595916

Inventors:

- San Jose CA, US
Hae Young Kim - San Jose CA, US
Jerry Mack - San Jose CA, US
Jae Seok Heo - Dublin CA, US
Sung-Hoon Jung - Santa Clara CA, US
Somilkumar J. Rathi - San Jose CA, US
Srishti Chugh - San Jose CA, US
Yoshikazu Okuyama - Santa Cruz CA, US
Bunsen B. Nie - Fremont CA, US

International Classification:

H01L 21/768

Abstract:

The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

US Patent:

20190062947, Feb 28, 2019

Filed:

Aug 25, 2017

Appl. No.:

15/687006

Inventors:

- Herzogenrath, DE
Miquel Angel Saldana - Santa Cruz CA, US
Dan Lester Cossentine - Santa Cruz CA, US
Hae Young Kim - San Jose CA, US
Subramanian Tamilmani - Fremont CA, US
Niloy Mukherjee - Dublin CA, US
M. Ziaul Karim - San Jose CA, US

International Classification:

C30B 25/18
C30B 25/08
H01L 21/02
H01L 21/3065
H01L 21/67
H01L 21/687
H01J 37/32

Abstract:

During a pre-treat process, hydrogen plasma is used to remove contaminants (e.g., oxygen, carbon) from a surface of a wafer. The hydrogen plasma may be injected into the plasma chamber via an elongated injector nozzle. Using such elongated injector nozzle, a flow of hydrogen plasma with a significant radial velocity flows over the wafer surface, and transports volatile compounds and other contaminant away from the wafer surface to an exhaust manifold. A protective liner made from crystalline silicon or polysilicon may be disposed on an inner surface of the plasma chamber to prevent contaminants from being released from the surface of the plasma chamber. To further decrease the sources of contaminants, an exhaust restrictor made from silicon may be employed to prevent hydrogen plasma from flowing into the exhaust manifold and prevent volatile compounds and other contaminants from flowing from the exhaust manifold back into the plasma chamber.