Hae Sun Kim

US Patent:

20210104396, Apr 8, 2021

Filed:

Oct 8, 2019

Appl. No.:

16/595945

Inventors:

- San Jose CA, US
Niloy Mukherjee - San Ramon CA, US
Yoshikazu Okuyama - Santa Cruz CA, US
Bunsen B. Nie - Fremont CA, US
Hae Young Kim - San Jose CA, US
Somilkumar J. Rathi - San Jose CA, US

International Classification:

H01L 21/02
C23C 16/34
H01L 21/28
C23C 16/455

Abstract:

The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method of forming a thin film comprising TiN comprises exposing a semiconductor substrate to one or more first cyclical vapor deposition cycles each comprising an exposure to a first Ti precursor and an exposure to a first N precursor to form a first portion of the thin film and exposing the semiconductor substrate to one or more second cyclical vapor deposition cycles each comprising an exposure to a second Ti precursor and an exposure to a second N precursor to form a second portion of the thin film, wherein exposures to one or both of the first Ti precursor and the first N precursor during the one or more first cyclical vapor deposition cycles are at different pressures relative to corresponding exposures to one or both of the second Ti precursor and the second N precursor during the one or more second cyclical vapor deposition cycles. Aspects are also directed to semiconductor structures incorporating the thin film and method of forming the same.

US Patent:

20210104397, Apr 8, 2021

Filed:

Oct 8, 2019

Appl. No.:

16/595952

Inventors:

- San Jose CA, US
Niloy Mukherjee - San Ramon CA, US
Hee Seok Kim - Seongnam, KR
Kyu Jin Choi - Seongnam, KR
Moonsig Joo - Suwon, KR
Hae Young Kim - San Jose CA, US
Yoshikazu Okuyama - Santa Cruz CA, US
Bunsen B. Nie - Fremont CA, US
Somilkumar J. Rathi - San Jose CA, US

International Classification:

H01L 21/02
C23C 16/455
H01L 21/28
C23C 16/34

Abstract:

The disclosed technology generally relates to forming a titanium nitride layer, and more particularly to forming by atomic layer deposition a titanium nitride layer on a seed layer. In one aspect, a semiconductor structure comprises a semiconductor substrate comprising a non-metallic surface. The semiconductor structure additionally comprises a seed layer comprising silicon (Si) and nitrogen (N) conformally coating the non-metallic surface and a TiN layer conformally coating the seed layer. Aspects are also directed to methods of forming the semiconductor structures.