Han W Choi

US Patent:

20190252580, Aug 15, 2019

Filed:

Apr 22, 2019

Appl. No.:

16/391064

Inventors:

- San Jose CA, US
Oleg Borisovich SHCHEKIN - San Jose CA, US
Han CHOI - San Jose CA, US
Peter Josef SCHMIDT - San Jose CA, US

International Classification:

H01L 33/50
H01L 27/15

Abstract:

In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.

US Patent:

20180294385, Oct 11, 2018

Filed:

Jun 7, 2018

Appl. No.:

16/002634

Inventors:

- San Jose CA, US
Han Ho Choi - Sunnyvale CA, US
Mark Melvin Butterworth - Santa Clara CA, US

Assignee:

Lumileds LLC - San Jose CA

International Classification:

H01L 33/46
H01L 25/075
H01L 33/58
G02F 1/1335
H01L 33/50

Abstract:

Light emitting devices are described herein. A light-emitting device includes a substrate having a surface below an optical cavity, one or more light emitting diodes (LEDs) disposed above the surface of the substrate, a first wavelength-converting layer, and a second wavelength-converting layer. The first wavelength-converting layer is disposed on the surface of the substrate below the optical cavity, covers the entire surface of the substrate except for portions of the surface of the substrate that are situated underneath any of the one or more LEDs, and has a thickness that is equal to or less than a thickness of at least one of the one or more LEDs. The second wavelength-converting layer is disposed above the optical cavity.

US Patent:

20180033923, Feb 1, 2018

Filed:

Aug 17, 2017

Appl. No.:

15/679897

Inventors:

- SAN JOSE CA, US
Oleg Borisovich SHCHEKIN - San Jose CA, US
Han Ho CHOI - San Jose CA, US
Peter Josef SCHMIDT - San Jose CA, US

Assignee:

LUMILEDS LLC. - SAN JOSE CA

International Classification:

H01L 33/50
H01L 27/15
H01L 25/075
H01L 33/60

Abstract:

In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.

US Patent:

20170352788, Dec 7, 2017

Filed:

Aug 23, 2017

Appl. No.:

15/684477

Inventors:

- Eindhoven, NL
Han Ho Choi - San Jose CA, US

International Classification:

H01L 33/50

Abstract:

Embodiments of the invention include a semiconductor light emitting device, a first wavelength converting member disposed on a top surface of the semiconductor light emitting device, and a second wavelength converting member disposed on a side surface of the semiconductor light emitting device. The first and second wavelength converting members include different wavelength converting materials.

US Patent:

20170301832, Oct 19, 2017

Filed:

Dec 30, 2014

Appl. No.:

15/102986

Inventors:

- Eindhoven, NL
Paul Martin - Livermore CA, US
Han Ho Choi - San Jose CA, US

International Classification:

H01L 33/50
H01L 33/60
H01L 33/00

Abstract:

A multi-stage lamination process is used to laminate a wavelength conversion film () to a transparent substrate (), and subsequently to a light emitting element (). The wavelength conversion film () may be an uncured phosphor-embedded silicone polymer, and the lamination process includes heating the polymer so that it adheres to the transparent substrate (), but is not fully cured. The phosphor-laminated transparent substrate () is sliced/diced and the wavelength conversion film () of each diced substrate is placed upon each light emitting element (). The semi-cured wavelength conversion film () is then laminated to the light emitting element () via heating, consequently curing the phosphor film. Throughout the process, no glue is used, and the optical losses associated with glue material are not introduced.

US Patent:

20160163931, Jun 9, 2016

Filed:

Jul 3, 2014

Appl. No.:

14/903727

Inventors:

- Eindhoven, NL
Oleg Borisovich Shchekin - San Jose CA, US
Han Ho Choi - San Jose CA, US
Peter Josef Schmidt - San Jose CA, US

International Classification:

H01L 33/50
H01L 27/15
H01L 33/60

Abstract:

In embodiments of the invention, a light emitting device includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A first wavelength converting layer is disposed in a path of light emitted by the light emitting layer. The first wavelength converting layer may be a wavelength converting ceramic. A second wavelength converting layer is fused to the first wavelength converting layer. The second wavelength converting layer may be a wavelength converting material disposed in glass.

US Patent:

20140179029, Jun 26, 2014

Filed:

Aug 21, 2012

Appl. No.:

14/238477

Inventors:

Jerome Chandra Bhat - Palo Alto CA, US
Daniel Alexander Steigerwald - Cupertino CA, US
Michael David Camras - Sunnyvale CA, US
Han Ho Choi - Sunnyvale CA, US
Nathan Fredrick Gardner - Sunnyvale CA, US
Oleg Borisovich Shchekin - San Francisco CA, US

Assignee:

KONINKLIJKE PHILIPS ELECTRONICS N.V. - EINDHOVEN

International Classification:

H01L 33/50
H01L 21/66

US Classification:

438 7, 438 27

Abstract:

A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.