Helen A Maynard

US Patent:

20100279479, Nov 4, 2010

Filed:

May 1, 2009

Appl. No.:

12/434364

Inventors:

Christopher R. Hatem - Cambridge MA, US
Helen L. Maynard - North Reading MA, US
Deepak A. Ramappa - Cambridge MA, US

Assignee:

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

International Classification:

H01L 21/30

US Classification:

438300, 257E21211

Abstract:

A method is disclosed for enhancing tensile stress in the channel region of a semiconductor structure. The method includes performing one or more cold-carbon or molecular carbon ion implantation steps to implant carbon ions within the semiconductor structure to create strain layers on either side of a channel region. Raised source/drain regions are then formed above the strain layers, and subsequent ion implantation steps are used to dope the raised source/drain region. A millisecond anneal step activates the strain layers and the raised source/drain regions. The strain layers enhances carrier mobility within a channel region of the semiconductor structure, while the raised source/drain regions minimize reduction in strain in the strain layer caused by subsequent implantation of dopant ions in the raised source/drain regions.

US Patent:

20120175342, Jul 12, 2012

Filed:

Jan 3, 2012

Appl. No.:

13/342762

Inventors:

Frank Sinclair - Quincy MA, US
Julian G. Blake - Gloucester MA, US
Helen L. Maynard - North Reading MA, US
Alexander C. Kontos - Beverly MA, US

Assignee:

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA

International Classification:

C23F 1/00
B05D 5/12

US Classification:

216 22, 427130

Abstract:

A novel, technique: for manufacturing bit patterned media is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for manufacturing hit pattern media. The technique, which may be realized as a method comprising: forming a non-catalysis region on a first portion of a catalysis layer; forming a non-magnetic separator on the non-catalysis region; and forming a magnetic active region on it second portion of the catalysis layer adjacent to the first portion of the catalysis layer.