Heng Yi Liu
age ~52
from Bellevue, WA
- Also known as:
-
- Heng Y Liu
- Wendy Liu
- Heng-Yi Te Liu
- Yi Liu Heng
- Hengyi Liu
- Heng Yi Lui
- Yi Huang Heng
- Yi Liu Hengyi
- Hengyi Lui
- Liu Heng-Yi
Heng Liu Phones & Addresses
- Bellevue, WA
- 1531 Pacheco St, San Francisco, CA 94116 • (415)7314298
- Burlingame, CA
- Daly City, CA
- West Lafayette, IN
- W Lafayette, IN
- San Mateo, CA
- Kiona, WA
Work
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Company:ebay
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Address:2211 N First Street, San Jose, CA 94086
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Phones:(408)9674854
Specialities
Buyer's Agent • Listing Agent
Real Estate Brokers
Heng Liu, San Jose CA
view sourceSpecialties:
Buyer's Agent
Listing Agent
Listing Agent
Work:
ebay
2211 N First Street, San Jose, CA 94086
(408)9674854 (Office)
2211 N First Street, San Jose, CA 94086
(408)9674854 (Office)
Isbn (Books And Publications)
Us Patents
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Ingan/Algan/Gan Multilayer Buffer For Growth Of Gan On Sapphire
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US Patent:6630695, Oct 7, 2003
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Filed:Jul 8, 2002
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Appl. No.:10/191886
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Inventors:Changhua Chen - San Jose CA 95129
James Dong - Claremont CA 91711
Heng Liu - Arcadia CA 91007 -
International Classification:H01L 3300
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US Classification:257190, 257103
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Abstract:A GaN based three layer buffer structure disposed on a substrate, and having a GaN layer disposed on the three layer buffer structure, the GaN layer serving as a platform for growth of a light emitting structure thereon.
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High Power Allngan Based Multi-Chip Light Emitting Diode
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US Patent:6869812, Mar 22, 2005
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Filed:May 13, 2003
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Appl. No.:10/438108
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Inventors:Heng Liu - Sunnyvale CA, US
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International Classification:H01L021/00
H01L021/20 -
US Classification:438 22, 438 46, 438 99, 438127
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Abstract:A light emitting diode chip having a substantially transparent substrate and having an aspect ratio which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed.
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Chemical Vapor Deposition Reactor Having Multiple Inlets
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US Patent:7641939, Jan 5, 2010
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Filed:Oct 31, 2007
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Appl. No.:11/932293
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Inventors:Heng Liu - Sunnyvale CA, US
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Assignee:Bridgelux, Inc. - San Jose CA
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International Classification:C23C 16/00
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US Classification:42725528
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Abstract:A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion.
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Light Emitting Device Having Stacked Multiple Leds
view source -
US Patent:7732803, Jun 8, 2010
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Filed:May 30, 2008
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Appl. No.:12/130824
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Inventors:Frank Shum - Sunnyvale CA, US
Heng Liu - Sunnyvale CA, US -
Assignee:Bridgelux, Inc. - Livermore CA
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International Classification:H01L 31/00
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US Classification:257 13, 257 94, 257 99, 257E25032, 257E51022, 438 22, 438 28, 438 47
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Abstract:A light emitting device and method of producing the same is disclosed. The light emitting device includes a heterostructure having a plurality of light emitting diodes (LEDs) stacked one on top of another.
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Light Emitting Diodes With Smooth Surface For Reflective Electrode
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US Patent:7781780, Aug 24, 2010
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Filed:May 13, 2008
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Appl. No.:12/120051
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Inventors:Chao-Kun Lin - Sunnyvale CA, US
Heng Liu - Sunnyvale CA, US -
Assignee:Bridgelux, Inc. - Livermore CA
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International Classification:H01L 27/15
H01L 29/26
H01L 31/12
H01L 33/00
H01L 29/22
H01L 29/24
H01L 29/06
H01L 31/0328
H01L 31/0336
H01L 31/072
H01L 31/109 -
US Classification:257 79, 257 13, 257 94, 257103, 257E33001, 257E33043, 257E33074
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Abstract:A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.
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Iii-Nitride Based On Semiconductor Device With Low-Resistance Ohmic Contacts
view source -
US Patent:7943949, May 17, 2011
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Filed:Sep 9, 2004
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Appl. No.:10/936496
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Inventors:Yun Li Li - Tainan, TW
Heng Liu - Sunnyvale CA, US -
Assignee:BridgeLux, Inc. - Livermore CA
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International Classification:H01L 33/02
H01L 33/20 -
US Classification:257 99, 257E33006, 257E33065
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Abstract:The present invention utilizes high-indium-content InGaN islands (0
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Light Emitting Diodes With Smooth Surface For Reflective Electrode
view source -
US Patent:8163578, Apr 24, 2012
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Filed:Jul 12, 2010
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Appl. No.:12/834747
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Inventors:Chao-Kun Lin - Sunnyvale CA, US
Heng Liu - Sunnyvale CA, US -
Assignee:Bridgelux, Inc. - Livermore CA
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International Classification:H01L 21/00
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US Classification:438 26, 438 46, 257 76, 257194, 257E33034
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Abstract:A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.
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Method Of Forming A Light-Emitting-Diode Array With Polymer Between Light Emitting Devices
view source -
US Patent:8193015, Jun 5, 2012
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Filed:Dec 21, 2010
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Appl. No.:12/975068
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Inventors:Ray-Hua Horng - Taichung, TW
Yi-An Lu - Chiayi, TW
Heng Liu - Sunnyvale CA, US -
Assignee:Pinecone Energies, Inc. - Tortola
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International Classification:H01L 21/00
H01L 21/44
H01L 29/207
H01L 29/06
H01L 23/48
H01L 23/58 -
US Classification:438 28, 438 34, 438 39, 438666, 257193, 257594, 257626, 257786, 257E3306, 257E33062, 257E33065
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Abstract:A method for forming a light-emitting-diode (LED) array is disclosed includes forming an LED structure on a substrate. The LED structure is divided into at least a first LED device and a second LED device with a gap between the first LED device and the second LED device. At least one polymer material is deposited over the LED structure to substantially fill the gap with the at least one polymer material. Portions of the at least one polymer material are removed to expose a first electrode of the first LED device and a second electrode of the second LED device. An interconnect is formed on top of the at least one polymer material electrically connecting the first and second electrode.
Youtube
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Googleplus
Heng Liu
Lived:
Manhattan, NY
Tianjin, China
Mountain View, CA
Salt Lake city, UT
Munich, Germany
Prague, Czech Republic
Tianjin, China
Mountain View, CA
Salt Lake city, UT
Munich, Germany
Prague, Czech Republic
Work:
Google - Decision Support Analytical Engineer Intern (4)
Education:
Columbia University - Statistics, PhD, Nankai University - Applied Mathematics, BS
About:
Statistician?
Heng Liu
Work:
Google
PayPal
PayPal
Education:
University of Illinois at Urbana-Champaign - Statistics
Heng Liu
About:
人见人爱的包子哥
Heng Liu
Tagline:
One World One Fucking Dream
Heng Liu
Heng Liu
Heng Liu
Heng Liu
Liu Heng
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Heng Liu
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Heng Liu
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Heng Chun Liu
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Heng Liu
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Heng Liu
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Heng Liu
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Heng Liu
view sourceClassmates
Heng Liu
view sourceSchools:
Jackson Elementary School Jackson MS 1996-2000
Heng Liu
view sourceSchools:
Hillcrest Elementary School Lawrence KS 2004-2005
Community:
Bill Shanmugham, Matthew Gelvin, Taylor Brown, Jessi Berglund, Sara Subtil, Matt Luna, Freeda Greens, Tara Cook, Jason Russell
News
Llama Nanobodies Could Be a Powerful New Weapon Against COVID-19
view source- Reference: Versatile and multivalent nanobodies efficiently neutralize SARS-CoV-2 by Yufei Xiang, Sham Nambulli, Zhengyun Xiao, Heng Liu, Zhe Sang, W. Paul Duprex, Dina Schneidman-Duhovny, Cheng Zhang and Yi Shi, 5 November 2020, Science.DOI: 10.1126/science.abe4747
- Date: Nov 08, 2020
- Category: More news
- Source: Google
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