Hien Kim Le

US Patent:

20070012557, Jan 18, 2007

Filed:

Jul 13, 2005

Appl. No.:

11/181043

Inventors:

Akihiro Hosokawa - Cupertino CA, US
Hien H. Le - San Jose CA, US

International Classification:

C23C 14/32
C23C 14/00

US Classification:

204192100, 204298160

Abstract:

Embodiments of the present invention generally relate to sputtering of materials. In particular, the invention relates to sputtering voltage used during physical vapor deposition of large area substrates to prevent arcing. One embodiment of the invention describes an apparatus for sputtering materials on rectangular substrates at a voltage less than 400 volts, that comprises a sputtering target; wherein the target is biased at a voltage less than 400 volts during sputtering materials on the rectangular substrates, a grounded shield surrounding the sputtering target, wherein the shortest distance between the grounded shield and the sputtering target is less than the plasma dark space thickness, a magnetron in the back of the sputtering target, where in the edge of the magnetron does not overlap the grounded shield, and an antenna structure placed between the sputtering target and the substrate, wherein the antenna structure is grounded during sputtering.

US Patent:

20070012562, Jan 18, 2007

Filed:

Jul 11, 2006

Appl. No.:

11/484333

Inventors:

Hien Minh Le - San Jose CA, US
Akihiro Hosokawa - Cupertino CA, US
Avi Tepman - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 14/00
C23C 14/32

US Classification:

204298160, 204192100

Abstract:

A rectangular magnetron placed at the back of a rectangular sputtering target for coating a rectangular panel and having magnets of opposed polarities arranged to form a gap therebetween corresponding to a plasma track adjacent the target which extends in a closed serpentine or spiral loop. The spiral may have a large number of wraps and the closed loop may be folded before wrapping. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target corresponding to at least the separation of the gap between parallel portions of the loop. A central ferromagnetic shim beneath some magnets in the loop may compensate for vertical droop. The magnetron may be scanned in two alternating double-Z patterns rotated 90 between them.

US Patent:

20070056845, Mar 15, 2007

Filed:

Apr 6, 2006

Appl. No.:

11/399122

Inventors:

Yan Ye - Saratoga CA, US
John White - Hayward CA, US
Akihiro Hosokawa - Cupertino CA, US
Hien Le - San Jose CA, US
Elpidio Nisperos - San Jose CA, US
Bradley Stimson - San Jose CA, US

International Classification:

C23C 14/32
C23C 14/00

US Classification:

204192100, 204298120

Abstract:

The present invention generally provides a sputtering apparatus and method in which a sputtering target has a plurality of target sections bonded to a common backing plate. Each segment can be bonded to the common backing plate using a different bonding material. One target segment can be bonded to the backing plate using electrically conductive bonding material while another section is bonded to the backing plate using electrically insulating bonding material. Additionally, each different target section can be separately biased.

US Patent:

20230037450, Feb 9, 2023

Filed:

Oct 18, 2022

Appl. No.:

17/968056

Inventors:

- Santa Clara CA, US
Mun Kyu Park - San Jose CA, US
Hien M Le - San Jose CA, US
Chih-Chiang Chuang - Milpitas CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/30
C23C 16/28
C23C 16/455
H01L 21/768
H01L 21/265
H01L 21/223

Abstract:

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

US Patent:

20200395218, Dec 17, 2020

Filed:

Jun 12, 2020

Appl. No.:

16/900181

Inventors:

- Santa Clara CA, US
Mun Kyu Park - San Jose CA, US
Hien M Le - San Jose CA, US
Chih-Chiang Chuang - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/30
C23C 16/455
C23C 16/28

Abstract:

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

US Patent:

20190393042, Dec 26, 2019

Filed:

Aug 29, 2019

Appl. No.:

16/554834

Inventors:

- Santa Clara CA, US
Kelvin CHAN - San Ramon CA, US
Hien Minh LE - San Jose CA, US
Sanjay KAMATH - Fremont CA, US
Abhijit Basu MALLICK - Fremont CA, US
Srinivas GANDIKOTA - Santa Clara CA, US
Karthik JANAKIRAMAN - San Jose CA, US

International Classification:

H01L 21/285
C23C 16/02
C23C 16/40
C23C 16/505
C23C 28/00
H01L 21/02
H01L 21/3205
C23C 16/06
H01L 21/768

Abstract:

Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

US Patent:

20170372953, Dec 28, 2017

Filed:

Jun 26, 2017

Appl. No.:

15/633366

Inventors:

- Santa Clara CA, US
Kelvin CHAN - San Ramon CA, US
Hien Minh LE - San Jose CA, US
Sanjay KAMATH - Fremont CA, US
Abhijit Basu MALLICK - Fremont CA, US
Srinivas GANDIKOTA - Santa Clara CA, US
Karthik JANAKIRAMAN - San Jose CA, US

International Classification:

H01L 21/768
H01L 21/02
H01L 21/285

Abstract:

Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

US Patent:

20140187045, Jul 3, 2014

Filed:

Jan 29, 2013

Appl. No.:

13/752769

Inventors:

- Santa Clara CA, US
Hien Minh Le - San Jose CA, US
Young Lee - San Jose CA, US

Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

H01L 21/02

US Classification:

438694

Abstract:

Methods of filling features with silicon nitride using high-density plasma chemical vapor deposition are described. Narrow trenches may be filled with gapfill silicon nitride without damaging compressive stress. A low but non-zero bias power is used during deposition of the gapfill silicon nitride. An etch step is included between each pair of silicon nitride high-density plasma deposition steps in order to supply sputtering which would normally be supplied by high bias power.