Hoang M Tran

US Patent:

7507522, Mar 24, 2009

Filed:

May 17, 2005

Appl. No.:

11/578278

Inventors:

Michael Karl Crawford - Glen Mills PA, US
Hoang Vi Tran - Wilmington DE, US
Andrew Edward Feiring - Wilmington DE, US
Michael Fryd - Philadelphia PA, US

Assignee:

E. I. DuPont de Nemours and Company - Wilmington DE

International Classification:

G03F 7/004

US Classification:

4302701, 430905, 430907, 526281, 568591

Abstract:

The present invention relates to novel unsaturated polycyclic compounds containing two fluoroalcohol substitutents. This invention also relates to homopolymers and copolymers derived from such unsaturated polycyclic compounds. The copolymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The polymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e. g. , 157 nm) which are useful as base resins in resists and potentially in many other applications.

US Patent:

20090299113, Dec 3, 2009

Filed:

May 28, 2008

Appl. No.:

12/128020

Inventors:

Douglas J. Adelman - Wilmington DE, US
Hoang Vi Tran - Wilmington DE, US

Assignee:

E. I. duPont de Nemours and Company - Wilmington DE

International Classification:

C07C 5/02

US Classification:

585264

Abstract:

A method for purifying liquid alkanes, especially dicyclic alkanes, for use in immersion lithography is provided. The method produces alkanes having absorbance at 193 nm of ≦0.1/cm, and residue of ≦100 ppm. The liquid alkane compositions are useful as immersion liquids in photomicrolithography employed for production of electronic circuits.

US Patent:

58215832, Oct 13, 1998

Filed:

Mar 6, 1996

Appl. No.:

8/610563

Inventors:

Fwu-Iuan Hshieh - Saratoga CA
Lih-Ying Ching - Cupertino CA
Hoang Tran - San Jose CA
Mike F. Chang - Cupertino CA

Assignee:

Siliconix incorporated - Santa Clara CA

International Classification:

H01L 2978

US Classification:

257330

Abstract:

A trenched DMOS transistor has significantly reduced on-resistance. A lightly doped P tub is formed surrounding the P+ body region in order to enhance avalanche breakdown. Thus the epitaxial layer resistivity can be decreased to reduce device on-resistance, while the desired breakdown voltage is also achieved. The on-resistance is further reduced by adding a pre-initial oxidation implant, i. e. phosphorous for an N channel device or boron for a P channel device. This forms a more heavily doped JFET or pinch region at the bottom of the trench and in the upper portion of the drift region. This N JFET region (which is P doped for a P channel device) is more heavily doped than the underlying epitaxial layer and surrounds the trench bottom, thus reducing on-resistance by increasing local doping concentration where otherwise a parasitic JFET would be present.

US Patent:

20190386403, Dec 19, 2019

Filed:

Jun 18, 2019

Appl. No.:

16/444304

Inventors:

- Wilmington DE, US
HOANG VI TRAN - WILMINGTON DE, US

International Classification:

H01R 4/04
H01R 13/03
H01R 43/00

Abstract:

This invention provides a polymer thick film electrically conductive paste composition, comprising conductive metal powder, a resin blend of polyol and phenoxy resin, blocked aliphatic polyisocyanate and one or more polar, aprotic solvents. In one embodiment the paste composition is used to form electrically conductive adhesive. In another embodiment the paste composition is used to form an electrically conductive polymer thick film.