Hong Lu

US Patent:

20210384367, Dec 9, 2021

Filed:

Aug 22, 2021

Appl. No.:

17/408430

Inventors:

- Darmstadt, DE
Arthur C. Gossard - Santa Barbara CA, US
Christopher J. Palmstrom - Santa Barbara CA, US
Hong Lu - West Covina CA, US

Assignee:

Technische Universität Darmstadt - Darmstadt

International Classification:

H01L 31/0304
H01L 31/08
H01S 5/30

Abstract:

A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material InGaAlAs is between x=0.2 and x=0.35, wherewith the proportion y of In may be between 0.5 and 0.55. The support substrate is InP or GaAs.

US Patent:

20190334044, Oct 31, 2019

Filed:

Jul 5, 2019

Appl. No.:

16/503788

Inventors:

- 64289 Darmstadt, DE
Arthur C. Gossard - Santa Barbara CA, US
Christopher J. Palmstrom - Santa Barbara CA, US
Hong Lu - West Covina CA, US

Assignee:

Technische Universitat Darmstadt - 64289 Darmstadt

International Classification:

H01L 31/0304
H01S 5/30
H01L 31/08

Abstract:

A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material InGaAlAs is between x=0.2 and x=0.35, wherewith the proportion y of in may be between 0.5 and 0.55. The support substrate is InP or GaAs.

US Patent:

20160240707, Aug 18, 2016

Filed:

Feb 12, 2016

Appl. No.:

15/042483

Inventors:

- Darmstadt, DE
Arthur C. Gossard - Santa Barbara CA, US
Christopher J. Palmstrom - Santa Barbara CA, US
Hong Lu - West Covina CA, US

Assignee:

Technische Universität Darmstadt - Darmstadt

International Classification:

H01L 31/0304
H01L 31/18
H01L 31/109

Abstract:

A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material InGaAlAs is between x=0.2 and x=0.35, wherewith the proportion y of In may be between 0.5 and 0.55. The support substrate is InP or GaAs.