Hong H Lu

US Patent:

8309602, Nov 13, 2012

Filed:

Oct 7, 2008

Appl. No.:

12/682513

Inventors:

Lan Xie - Beijing, CN
Bingjie Qin - Beijing, CN
Kuo-Hsiung Lee - Chapel Hill NC, US
Shibo Jiang - Fresh Meadows NY, US
Hong Lu - Bayside NY, US

Assignee:

Institute of Pharmacology and Toxicology - Beijing
Academy of Military Medical Sciences P.L.A. China - Beijing

International Classification:

A61K 31/277
A61K 31/136
C07C 255/50
C07C 255/51
C07C 211/46

US Classification:

514524, 514525, 514658, 558418, 558420, 564441

Abstract:

The present invention relates to multi-substituted m-diarylanilines or pharmaceutically acceptable salts thereof, wherein X, R-Rare as defined in the claims, their preparation process, pharmaceutical compositions comprising them and their use for the manufacture of a medicament for anti-HIV.

US Patent:

20060287319, Dec 21, 2006

Filed:

Jun 6, 2006

Appl. No.:

11/448439

Inventors:

Shibo Jiang - Fresh Meadows NY, US
Asim Debnath - Fort Lee NJ, US
Hong Lu - Bayside NY, US

International Classification:

A61K 31/53
A61K 31/501
A61K 31/497
A61K 31/496
A61K 31/4439
A61K 31/427

US Classification:

514241000, 514252130, 514255050, 514252020, 514252050, 514369000, 514253090, 514341000, 514342000

Abstract:

A group of compounds that inhibit HIV replication by blocking HIV entry was identified. One representative compound, designated NB-206, and its analogs inhibited HIV replication (p24 production) with ICvalues at nanomolar levels. It was proved that NB-206 and its analogs are HIV entry inhibitors by targeting the HIV gp41 since: 1) they inhibited HIV-mediated cell fusion; 2) they inhibited HIV replication only when they were added to the cells less than one hour after virus addition; 3) they blocked the formation of the gp41 core that is detected by sandwich enzyme linked immunosorbent assay (ELISA) using a conformation-specific MAb NC-1; and 4) they inhibited the formation of the gp41 six-helix bundle revealed by fluorescence native-polyacrylamide gel electrophoresis (FN-PAGE). These results suggested that NB-206 and its analogs may interact with the hydrophobic cavity and block the formation of the fusion-active gp41 coiled coil domain, resulting in inhibition of HIV-1 mediated membrane fusion and virus entry.

US Patent:

20120053213, Mar 1, 2012

Filed:

Sep 28, 2009

Appl. No.:

13/123494

Inventors:

Lan Xie - Beijing, CN
Xingtao Tian - Beijing, CN
Kuo-Hsiung Lee - Chapel Hill NC, US
Shibo Jiang - Shanghai, CN
Hong Lu - Bayside NY, US

Assignee:

INSTITUTE OF PHARMACOLOGY AND TOXICOLOGY ACADEMY OF MILITARY MEDICAL SCIENCES P.L.A. CHINA - Beijing

International Classification:

A61K 31/4412
A61P 31/18
C07D 213/74

US Classification:

514349, 546297

Abstract:

The invention relates to 2-(4-Substituted phenylamino) polysubstituted pyridine compounds as inhibitors of non-nucleoside HIV reverse transcriptase, preparation methods and uses thereof. Specifically, the invention relates to compounds of formula I or the pharmaceutically acceptable salts thereof, wherein R, R, R, R, R, R, Rand X are as defined in the description. The compounds of formula I of the invention are a type of anti-HIV active compounds having new backbone structure.

US Patent:

20210384367, Dec 9, 2021

Filed:

Aug 22, 2021

Appl. No.:

17/408430

Inventors:

- Darmstadt, DE
Arthur C. Gossard - Santa Barbara CA, US
Christopher J. Palmstrom - Santa Barbara CA, US
Hong Lu - West Covina CA, US

Assignee:

Technische Universität Darmstadt - Darmstadt

International Classification:

H01L 31/0304
H01L 31/08
H01S 5/30

Abstract:

A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material InGaAlAs is between x=0.2 and x=0.35, wherewith the proportion y of In may be between 0.5 and 0.55. The support substrate is InP or GaAs.

US Patent:

20190334044, Oct 31, 2019

Filed:

Jul 5, 2019

Appl. No.:

16/503788

Inventors:

- 64289 Darmstadt, DE
Arthur C. Gossard - Santa Barbara CA, US
Christopher J. Palmstrom - Santa Barbara CA, US
Hong Lu - West Covina CA, US

Assignee:

Technische Universitat Darmstadt - 64289 Darmstadt

International Classification:

H01L 31/0304
H01S 5/30
H01L 31/08

Abstract:

A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material InGaAlAs is between x=0.2 and x=0.35, wherewith the proportion y of in may be between 0.5 and 0.55. The support substrate is InP or GaAs.

US Patent:

20160240707, Aug 18, 2016

Filed:

Feb 12, 2016

Appl. No.:

15/042483

Inventors:

- Darmstadt, DE
Arthur C. Gossard - Santa Barbara CA, US
Christopher J. Palmstrom - Santa Barbara CA, US
Hong Lu - West Covina CA, US

Assignee:

Technische Universität Darmstadt - Darmstadt

International Classification:

H01L 31/0304
H01L 31/18
H01L 31/109

Abstract:

A photoconducting layered material arrangement for producing or detecting high frequency radiation includes a semiconductor material including an alloy comprised of InGaAs, InGaAsSb, or GaSb, with an admixture of Al, which material is applied to a suitable support substrate in a manner such that the lattices are suitably adjusted, wherewith the semiconductor material comprised of InGaAlAs, InGaAlAsSb, or GaAlSb has a band gap of more than 1 eV, as a consequence of the admixed proportion of Al. The proportion x of Al in the semiconductor material InGaAlAs is between x=0.2 and x=0.35, wherewith the proportion y of In may be between 0.5 and 0.55. The support substrate is InP or GaAs.