Houssam Hassan Chouaib

US Patent:

20130003050, Jan 3, 2013

Filed:

Jun 22, 2012

Appl. No.:

13/530774

Inventors:

NanChang Zhu - Shanghai, CN
Derrick Shaughnessy - San Jose CA, US
Houssam Chouaib - San Jose CA, US
Yaolei Zheng - Shanghai, CN
Lu Yu - Shanghai, CN
Jianli Cui - Shanghai, CN
Jin An - Shanghai, CN
Jianou Shi - Palo Alto CA, US

Assignee:

KLA-TENCOR CORPORATION - Milpitas CA

International Classification:

G01B 11/06
G01N 21/88
G01N 21/47

US Classification:

356 73

Abstract:

The disclosure is directed to nondestructive systems and methods for simultaneously measuring active carrier concentration and thickness of one or more doped semiconductor layers. Reflectance signals may be defined as functions of active carrier concentration and thickness varying over different wavelengths and over different incidence angles of analyzing illumination reflected off the surface of an analyzed sample. Systems and methods are provided for collecting a plurality of reflectance signals having either different wavelengths or different incidence angle ranges to extract active carrier density and thickness of one or more doped semiconductor layers.

US Patent:

20220349752, Nov 3, 2022

Filed:

Jul 1, 2022

Appl. No.:

17/856660

Inventors:

- Milpitas CA, US
Aaron Rosenberg - Milpitas CA, US
Dawei Hu - Milpitas CA, US
Alexander Kuznetsov - Milpitas CA, US
Manh Dang Nguyen - Milpitas CA, US
Stilian Pandev - Santa Clara CA, US
John Lesoine - Milpitas CA, US
Qiang Zhao - Milpitas CA, US
Liequan Lee - Fremont CA, US
Houssam Chouaib - San Jose CA, US
Ming Di - Hayward CA, US
Torsten R. Kaack - Los Altos CA, US
Andrei V. Shchegrov - Campbell CA, US
Zhengquan Tan - Milpitas CA, US

International Classification:

G01J 3/18
G01J 3/28
G01N 21/55
G01N 21/956
G01N 21/21
G01N 21/25
G01N 21/88
G01N 21/84

Abstract:

A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.

US Patent:

20200393386, Dec 17, 2020

Filed:

Aug 28, 2020

Appl. No.:

17/006450

Inventors:

- Milpitas CA, US
Jonathan Iloreta - Menlo Park CA, US
Thaddeus G. Dziura - San Jose CA, US
Antonio Gellineau - Santa Clara CA, US
Yin Xu - Shanghai, CN
Kaiwen Xu - Shanghai, CN
John Hench - Los Gatos CA, US
Abhi Gunde - Fremont CA, US
Andrei Veldman - Sunnyvale CA, US
Liequan Lee - Fremont CA, US
Houssam Chouaib - San Jose CA, US

International Classification:

G01N 21/95
H01L 27/02
H01L 27/088
H01L 27/108
G06T 17/10
G06T 15/20
G01N 21/956
H01L 27/115
G06F 30/39

Abstract:

A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an augmented-reality or virtual-reality (AR/VR) image of the model that shows a 3D shape of the model and provides the AR/VR image to an AR/VR viewing device for display.

US Patent:

20200271595, Aug 27, 2020

Filed:

Feb 22, 2019

Appl. No.:

16/283690

Inventors:

- Milpitas CA, US
Jonathan Iloreta - Menlo Park CA, US
Thaddeus G. Dziura - San Jose CA, US
Antonio Gellineau - Santa Clara CA, US
Yin Xu - Shanghai, CN
Kaiwen Xu - Shanghai, CN
John Hench - Los Gatos CA, US
Abhi Gunde - Fremont CA, US
Andrei Veldman - Sunnyvale CA, US
Liequan Lee - Fremont CA, US
Houssam Chouaib - San Jose CA, US

International Classification:

G01N 21/95
G06F 17/50
H01L 27/02
H01L 27/088
H01L 27/108
H01L 27/115
G06T 17/10
G06T 15/20
G01N 21/956

Abstract:

A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an image of the model that shows a 3D shape of the model and provides the image to a device for display.

US Patent:

20190178788, Jun 13, 2019

Filed:

Mar 28, 2018

Appl. No.:

15/938270

Inventors:

- Milpitas CA, US
Phillip Atkins - San Jose CA, US
Alexander Kuznetsov - Austin TX, US
Liequan Lee - Fremont CA, US
Natalia Malkova - Mountain View CA, US
Paul Aoyagi - Sunnyvale CA, US
Mikhail Sushchik - Pleasanton CA, US
Dawei Hu - Shanghai, CN
Houssam Chouaib - Milpitas CA, US

International Classification:

G01N 21/21
G01B 11/06
G05B 13/02
G03F 7/20

Abstract:

A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.

US Patent:

20190041266, Feb 7, 2019

Filed:

Aug 8, 2017

Appl. No.:

15/672120

Inventors:

- Milpitas CA, US
Aaron Rosenberg - Milpitas CA, US
Dawei Hu - Milpitas CA, US
Alexander Kuznetsov - Milpitas CA, US
Manh Dang Nguyen - Milpitas CA, US
Stilian Pandev - Santa Clara CA, US
John Lesoine - Milpitas CA, US
Qiang Zhao - Milpitas CA, US
Liequan Lee - Fremont CA, US
Houssam Chouaib - San Jose CA, US
Ming Di - Hayward CA, US
Torsten R. Kaack - Los Altos CA, US
Andrei V. Shchegrov - Campbell CA, US
Zhengquan Tan - Milpitas CA, US

International Classification:

G01J 3/18
G01J 3/28

Abstract:

A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.