Howard S Kurasaki

age ~70

from San Jose, CA

Also known as:
  • Howard Kurasaki
  • Howard I
  • Kurasaki Howard
5001 Vanderbilt Dr, San Jose, CA 95130(408)3790483

Howard Kurasaki Phones & Addresses

  • 5001 Vanderbilt Dr, San Jose, CA 95130 • (408)3790483
  • 385 Cuesta Dr, Los Altos, CA 94024
  • 5001 Vanderbilt Dr, San Jose, CA 95130 • (619)7088890


  • Position:


  • Degree:
    Associate degree or higher


Us Patents

  • Method And System For Controlled Isotropic Etching On A Plurality Of Etch Systems

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  • US Patent:
    8580585, Nov 12, 2013
  • Filed:
    Dec 18, 2009
  • Appl. No.:
  • Inventors:
    Howard Kurasaki - San Jose CA,
  • Assignee:
    Micrel, Inc. - San Jose CA
  • International Classification:
    H01L 21/67
  • US Classification:
    438 8, 438689, 15634523, 15634552, 257E21219
  • Abstract:
    A method for forming identical isotropic etch patterns in an etch system is disclosed. The method comprises providing a wafer paddle, a wafer, a plurality of identical etch systems, utilizing identical etch recipes within each of the plurality of etch systems, providing a fixed temperature stability time FTST for each system so that the heat transfer from the paddle to the wafer is constant, wherein the FTST is the same on each of the plurality of etch systems; and utilizing the plurality of identical etch systems to produce identical etches on each of the wafers based upon the FTST, wherein a five-second preheat step in the etch process is not utilized.
  • Dry Etch Process For Forming Champagne Profiles, And Dry Etch Apparatus

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  • US Patent:
    5013400, May 7, 1991
  • Filed:
    Jan 30, 1990
  • Appl. No.:
  • Inventors:
    Howard S. Kurasaki - San Jose CA
    Barbara F. Westlund - Saratoga CA
    James E. Nulty - San Jose CA
    E. John Vowles - Deering NH
  • Assignee:
    General Signal Corporation - Stamford CT
  • International Classification:
    H01L 21312
    B44C 122
    C03C 1500
    C03C 2506
  • US Classification:
  • Abstract:
    A two-step process for forming champagne profiles on semiconductor wafers that provide, when metallized, good reliability, microcracking-free contacts and vias is disclosed. Dry etch apparatus having electrodes in a triode configuration, two plasma forming regions, and a pressure control system operative to provide a wide setpoint pressure range is also disclosed.

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