Hsiao Yang Chang

US Patent:

20090211596, Aug 27, 2009

Filed:

Jul 11, 2007

Appl. No.:

11/827479

Inventors:

Seokmin Yun - Pleasanton CA, US
Mark Wilcoxson - Oakland CA, US
Ji Zhu - El Cerrito CA, US
Kevin Chuang - Jhubei City, TW
Hsiao Wei Chang - Fremont CA, US
David Lou - Jhubei City, TW

Assignee:

LAM RESEARCH CORPORATION - Fremont CA

International Classification:

B08B 7/00
B08B 3/00

US Classification:

134 6, 134 56 R

Abstract:

A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.

US Patent:

20120115332, May 10, 2012

Filed:

Jan 19, 2012

Appl. No.:

13/354322

Inventors:

Seokmin Yun - Pleasanton CA, US
Mark Wilcoxson - Oakland CA, US
Ji Zhu - El Cerrito CA, US
Kevin Chuang - Jhubei City, TW
Hsiao Wei Chang - Fremont CA, US
David Lou - Jhubei City, TW

Assignee:

LAM RESEARCH CORPORATION - Fremont CA

International Classification:

H01L 21/3065

US Classification:

438716, 257E21218

Abstract:

A method for processing a substrate includes etching a surface of the substrate using an etching chemistry in a plasma chamber, the etching configured to define one or more features on the surface of the substrate. The features have some etch polymer residues as a result of the etching. The etching is terminated. A dry flash chemistry is applied into the plasma chamber. The plasma chamber is powered for a period of time between about 5 seconds and about 10 seconds to perform a dry flash etch. During the dry flash etch, the chamber is set to a low pressure of between about 5 mTorr and about 40 mTorr. The dry flash etch acts to weaken adhesion of the etch polymer residues to the features. The substrate is moved from plasma chamber and into a wet clean chamber for cleaning which removes the etch polymer residues during fluid cleaning.

US Patent:

58677224, Feb 2, 1999

Filed:

Jan 28, 1998

Appl. No.:

/015484

Inventors:

Graham B. Whitted - Irvine CA
Hsiao Shih Chang - Orange CA

Assignee:

United Microelectronics Corporation - Hsin Chu
Meridian Semiconductor, Inc. - Irvine CA

International Classification:

G06F 1300

US Classification:

3958001

Abstract:

A floating-point processor and method detect a sticky bit during a floating point operation. The floating-point processor includes a sticky bit predictor circuit, a bit scanner, an exponent arithmetic circuit, and a mantissa arithmetic logic circuit. Input and output circuitry allow the floating-point processor to communicate with another processor. The bit scanner generates sticky significance values corresponding to the operands. When adding two operands, the sticky bit predictor circuit compares the sticky significance value of the smaller operand with an alignment value in order determine whether to set the sticky bit.