Hsiao Chen Chang

US Patent:

20090211596, Aug 27, 2009

Filed:

Jul 11, 2007

Appl. No.:

11/827479

Inventors:

Seokmin Yun - Pleasanton CA, US
Mark Wilcoxson - Oakland CA, US
Ji Zhu - El Cerrito CA, US
Kevin Chuang - Jhubei City, TW
Hsiao Wei Chang - Fremont CA, US
David Lou - Jhubei City, TW

Assignee:

LAM RESEARCH CORPORATION - Fremont CA

International Classification:

B08B 7/00
B08B 3/00

US Classification:

134 6, 134 56 R

Abstract:

A system and method for removing post-etch polymer residue from a surface of a substrate includes identifying a dry flash chemistry for removing the post-etch polymer residue from the surface of the substrate. The dry flash chemistry is configured to selectively remove the post-etch polymer residue left behind by an etch operation in a region where a feature was formed through a low-k dielectric film layer. The identified dry flash chemistry is applied using a short flash process to remove at least a portion of the post-etch polymer residue while minimizing the damage to the dielectric film layer. A wet cleaning chemistry is then applied to the surface of the substrate. The application of the wet cleaning chemistry aids in substantially removing the remaining post-etch polymer residue left behind by the short flash process.

US Patent:

20120115332, May 10, 2012

Filed:

Jan 19, 2012

Appl. No.:

13/354322

Inventors:

Seokmin Yun - Pleasanton CA, US
Mark Wilcoxson - Oakland CA, US
Ji Zhu - El Cerrito CA, US
Kevin Chuang - Jhubei City, TW
Hsiao Wei Chang - Fremont CA, US
David Lou - Jhubei City, TW

Assignee:

LAM RESEARCH CORPORATION - Fremont CA

International Classification:

H01L 21/3065

US Classification:

438716, 257E21218

Abstract:

A method for processing a substrate includes etching a surface of the substrate using an etching chemistry in a plasma chamber, the etching configured to define one or more features on the surface of the substrate. The features have some etch polymer residues as a result of the etching. The etching is terminated. A dry flash chemistry is applied into the plasma chamber. The plasma chamber is powered for a period of time between about 5 seconds and about 10 seconds to perform a dry flash etch. During the dry flash etch, the chamber is set to a low pressure of between about 5 mTorr and about 40 mTorr. The dry flash etch acts to weaken adhesion of the etch polymer residues to the features. The substrate is moved from plasma chamber and into a wet clean chamber for cleaning which removes the etch polymer residues during fluid cleaning.