Vani Thirumala - San Jose CA, US Nabil Mistkawi - Keizer OR, US Bruce Beattie - Portland OR, US John O'Sullivan - CO. Weath, IE Huiying Liu - Sunnyvale CA, US Noriko Oshiro - San Jose CA, US Hokkin Choi - San Jose CA, US Loretta Cordrey - Livermore CA, US
International Classification:
H01L021/302 H01L021/461
US Classification:
438745000
Abstract:
By providing a silicon containing precursor, such as methyl triethoxysilane, to a phosphoric etch bath, wafers containing nitride may be selectively etched without unduly impacting other silicon containing underlying layers.