Ilya N Krivorotov

US Patent:

20070259209, Nov 8, 2007

Filed:

May 5, 2006

Appl. No.:

11/418958

Inventors:

Andrei Slavin - Rochester Hills MI, US
Ilya Krivorotov - Irvine CA, US

International Classification:

B32B 15/00

US Classification:

428692100, 428693100

Abstract:

Spin-torque devices are based on a combination of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects. The basic structure has various applications, including amplifiers, oscillators, and diodes. For example, if the low-magnetoresistance contact is biased below a critical value, the device may function as a microwave-frequency selective amplifier. If the low-magnetoresistance contact is biased above the critical value, the device may function as a microwave oscillator. A plurality of low- and high-magnetoresistance contact pairs may be induced to oscillate in a phase-locked regime, thereby multiplying output power. The frequency of operation of these devices will be tunable by the external magnetic field, as well as by the direct bias current, in the frequency range between 10 and 100 GHz. The devices do not use semiconductor materials and are expected to be exceptionally radiation-hard, thereby finding application in military nanoelectronics.

US Patent:

20130099339, Apr 25, 2013

Filed:

Oct 20, 2011

Appl. No.:

13/278020

Inventors:

Thomas J. Meitzler - Troy MI, US
Elena N. Bankowski - Royal Oak MI, US
Michael Nranian - South Lyon MI, US
Ilya N. Krivorotov - Irvine CA, US
Andrei N. Slavin - Rochester Hills MI, US
Vasyl S. Tyberkevych - Rochester Hills MI, US

Assignee:

The United States of America as Represented by the Secretary of the Army - Washington DC

International Classification:

H01L 29/82

US Classification:

257424, 257E29323

Abstract:

A spintronic electronic apparatus having a multilayer structure. The apparatus includes a substrate, having disposed in succession upon the substrate; a bottom interface layer; a pinned layer; a tunneling barrier; a free layer; and a top interface layer, wherein the apparatus operates as a non-resonant magnetic tunnel junction in a large amplitude, out-of-plane magnetization precession regime having weakly current dependent, large diode volt-watt sensitivity when external microwave signals that exceed a predetermined threshold current and have a frequency that is lower than a predetermined level excite the magnetization precession.