Wayne Yeung - San Francisco CA Chiakang Sung - Milpitas CA Myron W. Wong - Fremont CA Khai Nguyen - San Jose CA Bonnie I. Wang - Cupertino CA Xiaobao Wang - Santa Clara CA Joseph Huang - San Jose CA In Whan Kim - San Jose CA
Assignee:
Altera Corporation - San Jose CA
International Classification:
H01L 2500
US Classification:
326 41, 326 50, 326 45
Abstract:
A programmable input/output circuit for a programmable logic device input/output pin can be configured in a standard I/O mode, or in a reference voltage mode. The circuit includes a tristatable, but otherwise standard I/O buffer as well as a reference voltage clamp circuit. In reference voltage mode, the I/O circuit is tristated, and the reference voltage clamp circuit passes a reference voltage from the I/O pin to a reference voltage bus. In standard I/O mode, the I/O buffer is operational. The reference voltage clamp circuit isolates the I/O pin from the reference voltage bus and may include undervoltage and overvoltage protection to prevent disturbance of the reference voltage bus by an out-of-range I/O signal.
Yan Chong - Stanford CA Chiakang Sung - Milpitas CA Bonnie Wang - Cupertino CA Khai Nguyen - San Jose CA Joseph Huang - San Jose CA Xiaobao Wang - Santa Clara CA Philip Pan - Freemont CA In Whan Kim - San Jose CA Gopi Rangan - Santa Clara CA Thomas H. White - Santa Clara CA
Assignee:
Altera Corporation - San Jose CA
International Classification:
H03K 190175
US Classification:
326 82, 326 57
Abstract:
A supply voltage detection circuit determines when the voltage for any one of the power supply signals received by an integrated circuit device is below its steady state level, as may occur during a hot socket condition when the device is inserted in or removed from a powered-on system. A first detection circuit determines when the first supply voltage level is below its steady state level, and a second detection circuit determines when the second supply voltage level is below its steady state level. A logic circuit provides a detected condition signal that disables current flow through an input/output terminal associated with the supply voltage detection circuit. The circuit is able to rapidly detect hot socket conditions for a wide range of power supply signal; levels, including low supply signal levels, while limiting leakage current effects.
Philip Y. Pan - Fremont CA Chiakang Sung - Milpitas CA Joseph Huang - San Jose CA Bonnie Wang - Cupertino CA Khai Nguyen - San Jose CA Xiaobao Wang - Santa Clara CA Gopinath Rangan - Santa Clara CA In Whan Kim - San Jose CA Yan Chong - Stanford CA
Assignee:
Altera Corporation - San Jose CA
International Classification:
G11C 800
US Classification:
36523005, 365154
Abstract:
Methods and apparatus for a dual-port SRAM in a programmable logic device. One embodiment provides a programmable logic integrated circuit including a dual-port memory. The memory includes a plurality of memory storage cells, and each memory storage cell has a memory cell having a first node and a second node, a first series of devices connected between a first data line and the first node of the memory cell, and a second series of devices connected between a second data line and the second node of the memory cell. A read cell is connected to the second node of the memory cell. A word line is connected to a first device in the first series of devices, a second device in the second series of devices, and the read cell.
Philip Y. Pan - Fremont CA Chiakang Sung - Milpitas CA Joseph Huang - San Jose CA Bonnie Wang - Cupertino CA Khai Nguyen - San Jose CA Xiaobao Wang - Santa Clara CA Gopinath Rangan - Santa Clara CA In Whan Kim - San Jose CA Yan Chong - Stanford CA
Assignee:
Altera Corporation - San Jose CA
International Classification:
G11C 700
US Classification:
36518901, 36523005, 36523006, 36523002
Abstract:
Methods and apparatus for decoding addresses in a memory to provide mixed input and output data widths. A method includes receiving an address portion comprising a first number of bits. A second number of bits of the address portion are blocked, where the second number is less than the first number. A third number of bits are not blocked, and the third number plus the second number equal the first number. The third number of bits are decoded and a fourth number of memory cells are selected. The fourth number is equal to two to the power of the second number. A fourth number of data bits are received and multiplexed to the selected memory cells. The data bits are written to the selected memory cells.
Input Buffer For Multiple Differential I/O Standards
Jonathan Chung - Newark CA In Whan Kim - San Jose CA Philip Pan - Freemont CA Chiakang Sung - Milpitas CA Bonnie Wang - Cupertino CA Xiaobao Wang - Santa Clara CA Yan Chong - Stanford CA Gopinath Rangan - Santa Clara CA Khai Nguyen - San Jose CA Joseph Huang - San Jose CA
Assignee:
Altera Corporation - San Jose CA
International Classification:
H03K 190175
US Classification:
326 68, 326 83, 327408
Abstract:
An input buffer circuit has a plurality of selectively enabled differential amplifier circuits, where each differential amplifier is configured for compatibility with a particular differential I/O standard and its corresponding input operating range. For example, the input buffer may have two differential amplifiers suitable for receiving LVDS differential input signals over a wide input operating range, and another differential amplifier suitable for receiving the PCML differential input signals. One or more control signals are provided to the input buffer, e. g. , programmably, to selectively enable the required differential amplifier(s) for a given I/O standard.
Yan Chong - Stanford CA, US Chiakang Sung - Milpitas CA, US Bonnie Wang - Cupertino CA, US Khai Nguyen - San Jose CA, US Joseph Huang - San Jose CA, US Xiaobao Wang - Santa Clara CA, US Philip Pan - Freemont CA, US In Whan Kim - San Jose CA, US Gopi Rangan - Santa Clara CA, US Thomas H. White - Santa Clara CA, US
Assignee:
Altera Corporation - San Jose CA
International Classification:
H03K019/0175
US Classification:
326 82, 326 57
Abstract:
A supply voltage detection circuit determines when the voltage for any one of the power supply signals received by an integrated circuit device is below its steady state level, as may occur during a hot socket condition when the device is inserted in or removed from a powered-on system. A first detection circuit determines when the first supply voltage level is below its steady state level, and a second detection circuit determines when the second supply voltage level is below its steady state level. A logic circuit provides a detected condition signal that disables current flow through an input/output terminal associated with the supply voltage detection circuit. The circuit is able to rapidly detect hot socket conditions for a wide range of power supply signal levels, including low supply signal levels, while limiting leakage current effects.
Philip Y. Pan - Fremont CA, US Chiakang Sung - Milpitas CA, US Joseph Huang - San Jose CA, US Bonnie Wang - Cupertino CA, US Khai Nguyen - San Jose CA, US Xiaobao Wang - Santa Clara CA, US Gopinath Rangan - Santa Clara CA, US In Whan Kim - San Jose CA, US Yan Chong - Stanford CA, US
Assignee:
Altera Corporation - San Jose CA
International Classification:
G11C 8/00
US Classification:
36523005, 365154
Abstract:
Methods and apparatus for a dual-port SRAM in a programmable logic device. One embodiment provides a programmable logic integrated circuit including a dual-port memory. The memory includes a plurality of memory storage cells, and each memory storage cell has a memory cell having a first node and a second node, a first series of devices connected between a first data line and the first node of the memory cell, and a second series of devices connected between a second data line and the second node of the memory cell. A read cell is connected to the second node of the memory cell. A word line is connected to a first device in the first series of devices, a second device in the second series of devices, and the read cell.
Yan Chong - Stanford CA, US Chiakang Sung - Milpitas CA, US Bonnie Wang - Cupertino CA, US Khai Nguyen - San Jose CA, US Joseph Huang - San Jose CA, US Xiaobao Wang - Santa Clara CA, US Philip Pan - Freemont CA, US In Whan Kim - San Jose CA, US Gopi Rangan - Santa Clara CA, US Thomas H. White - Santa Clara CA, US
Assignee:
Altera Corporation - San Jose CA
International Classification:
H03K 19/0175
US Classification:
326 82, 326 38
Abstract:
A supply voltage detection circuit determines when the voltage for any one of the power supply signals received by an integrated circuit device is below its steady state level, as may occur during a hot socket condition when the device is inserted in or removed from a powered-on system. A first detection circuit determines when the first supply voltage level is below its steady state level, and a second detection circuit determines when the second supply voltage level is below its steady state level. A logic circuit provides a detected condition signal that disables current flow through an input/output terminal associated with the supply voltage detection circuit. The circuit is able to rapidly detect hot socket conditions for a wide range of power supply signal levels, including low supply signal levels, while limiting leakage current effects.
Dr. Kim graduated from the Yonsei Univ, Coll of Med, Sudai Moon Ku, Seoul, So Korea in 1972. He works in Colmar, PA and 1 other location and specializes in Internal Medicine. Dr. Kim is affiliated with Abington Memorial Hospital, Delaware County Memorial Hospital and Einstein Medical Center Of Philadelphia.
Norton Medical GroupKosair Childrens Hospital Emergency Medicine 231 E Chestnut St STE K634, Louisville, KY 40202 (502)6296000 (phone), (502)6297228 (fax)
Education:
Medical School Cornell University Weill Medical College Graduated: 1995
Dr. Kim graduated from the Cornell University Weill Medical College in 1995. He works in Louisville, KY and specializes in Pediatric Emergency Medicine. Dr. Kim is affiliated with Kosair Childrens Hospital.
Dr. Kim graduated from the Washington University School of Medicine in 1959. He works in Pasadena, CA and specializes in Internal Medicine and Rheumatology. Dr. Kim is affiliated with Glendale Memorial Hospital & Health Center and Huntington Memorial Hospital.
Department of Physics, The University of Texas at Austin Austin, TX 2007 to 2014 Graduate Student Research AssistantDepartment of Physics, The University of Texas at Austin Austin, TX 2005 to 2007 Graduate Student Teaching Assistant
Education:
The University of Texas at Austin Austin, TX 2013 Ph.D. in PhysicsUniversity of California, Berkeley Berkeley, CA 2004 B.A. in Physics, Astrophysics
Skills:
Operation and maintenance of Ti:Sapphire and optical parametric chirped pulse amplification lasers, Optical compression and autocorrelation measurements for ultra-short pulses, Optical layout design using SolidWorks, Short pulse mode-locked Ti:Sapphire oscillators, Alignment and characterization of multi-pass amplification crystals