In Do Kim

US Patent:

20220286151, Sep 8, 2022

Filed:

Mar 5, 2021

Appl. No.:

17/193939

Inventors:

- Chicago IL, US
Gregory J. Buchwald - Crystal Lake IL, US
Dennis M. Drees - Deer Park IL, US
In S. Kim - Buffalo Grove IL, US
Arthur Christopher Leyh - Spring Grove IL, US

International Classification:

H04B 1/04
H04B 17/318
H04B 1/10

Abstract:

Apparatus and method for linearizing narrowband carriers with low resolution predistorters are provided. The method includes amplifying, using a power amplifier, one or more broadcast carriers and linearizing, using a predistorter coupled to the power amplifier, the one or more broadcast carriers. The method also includes determining, using an electronic processor, a composite bandwidth of the one or more broadcast carriers and determining, using the electronic processor, whether the composite bandwidth is below a modulation bandwidth of the predistorter. The method further includes controlling, using the electronic processor, a pacification carrier generator coupled to the electronic processor to combine a pacification carrier with the one or more broadcast carriers when the composite bandwidth is below the minimum modulation bandwidth of the predistorter.

US Patent:

20230079735, Mar 16, 2023

Filed:

Aug 29, 2022

Appl. No.:

17/822958

Inventors:

- Chicago IL, US
Cary Michael HAYNER - Chicago IL, US
Kathryn HICKS - Chicago IL, US
In KIM - Chicago IL, US
Nevin NAREN - Chicago IL, US
Aaron YOST - Evanston IL, US

International Classification:

H01M 4/36
H01M 10/0525
H01M 50/46
H01M 4/04
H01M 4/505
H01M 4/58
H01M 4/583
H01M 4/62

Abstract:

An active material for a lithium ion secondary battery includes core particles containing SiO or M-SiO materials where M is selected from Al, Cu, Fe, K, Li, Mg, Na, Ni, Sn, Ti, Zn, Zr, or any combination thereof, and an amorphous Group 13 or Group 15 material (“G13/G15 material”) comprising at least one element selected from boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), or bismuth (Bi), coated on the core particles.

US Patent:

20180031496, Feb 1, 2018

Filed:

Jul 27, 2016

Appl. No.:

15/221167

Inventors:

- Chicago IL, US
Jonathan D. Emery - Chicago IL, US
In Soo Kim - Woodridge IL, US
Alex B. Martinson - Naperville IL, US
David M. Tiede - Elmhurst IL, US

Assignee:

UChicago Argonne, LLC - Chicago IL

International Classification:

G01N 23/203
C25D 9/04
C25D 17/12
C25B 1/04

Abstract:

An electrochemical cell that allows for in-situ structural characterization of amorphous thin film materials during the course of electrolysis using high-energy X-ray scattering (>50 keV). The compact and versatile cell, fabricated using a D printer, employs a three-electrode configuration and minimizes X-ray scattering contributions from the cell, reference and counter electrodes, as well as the working electrode support. A large surface area working electrode has a physically robust support and is largely transparent to X-rays. This design, which utilizes a three-dimensional working electrode, also greatly improves the intensity and quality of the scattered signal compared to a two-dimensional working electrode. The in-situ cell can be used not only to investigate structural evolution during electrolysis using X-ray scattering (e.g. pair distribution function), but also to perform electrochemical potential-dependent structural analysis by extended X-ray absorption fine structure. The in-situ electrochemical cell opens new opportunity to characterize amorphous thin films thinner than 70 nm.

US Patent:

20170040560, Feb 9, 2017

Filed:

Aug 5, 2015

Appl. No.:

14/819248

Inventors:

- Chicago IL, US
In Soo Kim - Woodridge IL, US

Assignee:

UCHICAGO ARGONNE, LLC - Chicago IL

International Classification:

H01L 51/44
H01L 31/032
H01L 31/0216
H01L 51/42

Abstract:

A method of protecting a perovskite halide film from moisture and temperature includes positioning the perovskite halide film in a chamber. The chamber is maintained at a temperature of less than 200 degrees Celsius. An organo-metal compound is inserted into the chamber. A non-hydrolytic oxygen source is subsequently inserted into the chamber. The inserting of the organo-metal compound and subsequent inserting of the non-hydrolytic oxygen source into the chamber is repeated for a predetermined number of cycles. The non-hydrolytic oxygen source and the organo-metal compound interact in the chamber to deposit a non-hydrolytic metal oxide film on perovskite halide film. The non-hydrolytic metal oxide film protects the perovskite halide film from relative humidity of greater than 35% and a temperature of greater than 150 degrees Celsius, respectively.