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Ion G Bita

age ~49

from Santa Clara, CA

Also known as:
  • Ion Bta
  • Bita Ion
Phone and address:
4338 Watson Cir, Santa Clara, CA 95054
(617)6230683

Ion Bita Phones & Addresses

  • 4338 Watson Cir, Santa Clara, CA 95054 • (617)6230683
  • Los Altos, CA
  • San Jose, CA
  • 45 Concord Ave, Somerville, MA 02143 • (617)6230683
  • 35 Northampton St, Boston, MA 02118 • (617)2478515
  • Cambridge, MA
  • Randolph, MA

Resumes

Ion Bita Photo 1

Display Nti Manager

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Location:
Santa Clara, CA
Industry:
Consumer Electronics
Work:
Qualcomm - San Jose, CA since Nov 2005
Senior Staff Engineer/Manager, Qualcomm MEMS Technologies
Education:
Massachusetts Institute of Technology 2000 - 2005
PhD, Materials Science and Engineering
Massachusetts Institute of Technology 1997 - 2000
BSc, Chemical Engineering
Massachusetts Institute of Technology 1997 - 2000
BSc, Chemistry
Skills:
Mems
Characterization
Thin Films
Semiconductors
R&D
Optics
Sensors
Materials
Engineering Management
Materials Science
Product Development
Cross Functional Team Leadership
Jmp
Technology Transfer
Patents
Optoelectronics
Display Technology
Product Engineering
Research and Development
Failure Analysis
Ion Bita Photo 2

Ion Bita

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Us Patents

  • Systems And Methods Of Providing A Light Guiding Layer

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  • US Patent:
    7619822, Nov 17, 2009
  • Filed:
    Jan 30, 2007
  • Appl. No.:
    11/669074
  • Inventors:
    Russell Wayne Gruhike - Santa Clara CA, US
    Mark Mienko - San Jose CA, US
    Gang Xu - Cupertino CA, US
    Ion Bita - San Jose CA, US
  • Assignee:
    QUALCOMM MEMS Technologies, Inc. - San Diego CA
  • International Classification:
    G02B 5/02
    F21V 7/04
    G02B 26/00
  • US Classification:
    359599, 362600, 362603, 362609, 362610, 359291
  • Abstract:
    Various embodiments of the invention include an interferometric optical modulator comprising a substrate layer and a light direction layer. Such an interferometric modulator may be integrated with a diffuser layer in a display device in a way that physically integrates the diffuser layer into the light direction layer in a way where the diff-user layer does not interact with light propagating within the light direction layer. As a result, most of the light propagating within the light direction layer does not penetrate into the diffuser which would inhibit performance of the display. In some embodiments, the interface between the diffuser layer and the light direction layer has a lower index of refraction than the light direction layer and the transparent substrate so that total internal reflection occurs at the interface.
  • Dual Film Light Guide For Illuminating Displays

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  • US Patent:
    7733439, Jun 8, 2010
  • Filed:
    Apr 30, 2007
  • Appl. No.:
    11/742299
  • Inventors:
    Jeffrey B. Sampsell - Pueblo West CO, US
    Russell W. Gruhlke - Santa Clara CA, US
    Mark Mienko - San Jose CA, US
    Gang Xu - Cupertino CA, US
    Ion Bita - San Jose CA, US
  • Assignee:
    QUALCOMM MEMS Technologies, Inc. - San Diego CA
  • International Classification:
    G02F 1/335
    G02F 1/00
  • US Classification:
    349 62, 349 67
  • Abstract:
    A front light guide panel including a plurality of embedded surface features is provided. The front light panel is configured to deliver uniform illumination from an artificial light source disposed at one side of the font light panel to an array of display elements located behind the front light guide while allowing for the option of illumination from ambient lighting transmitted through the light guide panel. The surface embedded surface relief features create air pockets within the light guide panel. Light incident on the side surface of the light guide propagates though the light guide until it strikes an air/light material guide interface at one on the air pockets. The light is then turned by total internal reflection through a large angle such that it exits an output face disposed in front of the array of display elements.
  • Systems And Methods Of Providing A Light Guiding Layer

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  • US Patent:
    7777954, Aug 17, 2010
  • Filed:
    Jan 30, 2007
  • Appl. No.:
    11/669074
  • Inventors:
    Russell Wayne Gruhike - Santa Clara CA, US
    Mark Mienko - San Jose CA, US
    Gang Xu - Cupertino CA, US
    Ion Bita - San Jose CA, US
  • Assignee:
    QUALCOMM MEMS Technologies, Inc. - San Diego CA
  • International Classification:
    G02B 5/02
    F21V 7/04
    G02B 26/00
  • US Classification:
    359599, 362600, 362603, 362609, 362610, 359291
  • Abstract:
    Various embodiments of the invention include an interferometric optical modulator comprising a substrate layer and a light direction layer. Such an interferometric modulator may be integrated with a diffuser layer in a display device in a way that physically integrates the diffuser layer into the light direction layer in a way where the diff-user layer does not interact with light propagating within the light direction layer. As a result, most of the light propagating within the light direction layer does not penetrate into the diffuser which would inhibit performance of the display. In some embodiments, the interface between the diffuser layer and the light direction layer has a lower index of refraction than the light direction layer and the transparent substrate so that total internal reflection occurs at the interface.
  • Post-Release Adjustment Of Interferometric Modulator Reflectivity

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  • US Patent:
    7864403, Jan 4, 2011
  • Filed:
    Mar 27, 2009
  • Appl. No.:
    12/413452
  • Inventors:
    Ion Bita - San Jose CA, US
    Jeffrey B. Sampsell - Pueblo West CO, US
  • Assignee:
    Qualcomm Mems Technologies, Inc. - San Diego CA
  • International Classification:
    G02B 26/00
  • US Classification:
    359292, 359291
  • Abstract:
    In various embodiments, devices, methods, and systems for adjusting the reflectivity spectrum of a microelectromechanical systems (MEMS) device are described herein. The method comprises depositing a reflectivity modifying layer with the optical cavity of an interferometric modulator, where the reflectivity modifying layer shifts or trims the shape of the interferometric modulator's wavelength reflectivity spectrum relative to the absence of the reflectivity modifying layer.
  • Microelectromechanical Systems Display Element With Photovoltaic Structure

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  • US Patent:
    7898723, Mar 1, 2011
  • Filed:
    Apr 2, 2008
  • Appl. No.:
    12/061312
  • Inventors:
    Kasra Khazeni - San Jose CA, US
    Manish Kothari - Cupertino CA, US
    Ion Bita - San Jose CA, US
    Marek Mienko - San Jose CA, US
    Gang Xu - Cupertino CA, US
  • Assignee:
    QUALCOMM MEMS Technologies, Inc. - San Diego CA
  • International Classification:
    G02B 26/00
    G02B 26/08
    G02F 1/29
  • US Classification:
    359291, 359298
  • Abstract:
    A microelectromechanical systems (MEMS) display element may include a photovoltaic structure configured to generate electric energy from incident light. In one embodiment, the display element includes a first layer that is at least partially transmissive of light, a second layer that is at least partially reflective of light, and a photovoltaic element that is formed on the first layer or the second layer or formed between the first layer and the second layer. The second layer is spaced from the first layer and is selectably movable between a first position in which the display element has a first reflectivity and a second position in which the display element has a second reflectivity. The first reflectivity is greater than the second reflectivity. The photovoltaic element is at least partially absorptive of light and is configured to convert a portion of the absorbed light into electric energy, at least when the second layer is in the second position.
  • Light Illumination Of Displays With Front Light Guide And Coupling Elements

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  • US Patent:
    7949213, May 24, 2011
  • Filed:
    Dec 7, 2007
  • Appl. No.:
    11/952872
  • Inventors:
    Marek Mienko - San Jose CA, US
    Gang Xu - Cupertino CA, US
    Ion Bita - San Jose CA, US
    Russell Wayne Gruhlke - Milpitas CA, US
    Alberto Emerico Brewer - Chula Vista CA, US
  • Assignee:
    QUALCOMM MEMS Technologies, Inc. - San Diego CA
  • International Classification:
    G02B 6/26
    G02B 6/42
  • US Classification:
    385 31, 362600, 362602, 362603, 362607, 362617, 362330, 362560, 362561, 362 971, 362 972, 362 973, 385129, 385131
  • Abstract:
    In various embodiments described herein, a display device includes a front illumination apparatus that comprises a first light guide disposed forward of an array of display elements, such as an array of interferometric modulators, to distribute light across the array of display elements. The light guide panel is edge illuminated by a light source positioned behind the array display elements. The light from such a light source is coupled to a second light guide disposed behind the array of display elements and positioned laterally with respect to the light source. The light in the second light guide is coupled into the first light guide using a small optical coupling element such as a turning mirror. In some embodiments the second light guide may comprise the backplate of the display device.
  • Device Having Power Generating Black Mask And Method Of Fabricating The Same

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  • US Patent:
    7969641, Jun 28, 2011
  • Filed:
    Feb 13, 2009
  • Appl. No.:
    12/371538
  • Inventors:
    Ion Bita - San Jose CA, US
    Chun-Ming Wang - Fremont CA, US
    Gang Xu - Cupertino CA, US
  • Assignee:
    QUALCOMM MEMS Technologies, Inc. - San Diego CA
  • International Classification:
    G02B 7/02
  • US Classification:
    359290, 359315, 349 27
  • Abstract:
    A power generating black mask comprising an anti-reflection layer deposited over a substrate, a first electrode layer deposited over the anti-reflection layer, a semi-conductor layer deposited over the first electrode layer and a second electrode layer deposited over the semi-conductor layer.
  • Printable Static Interferometric Images

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  • US Patent:
    8023191, Sep 20, 2011
  • Filed:
    May 7, 2008
  • Appl. No.:
    12/116791
  • Inventors:
    Mark W. Miles - Atlanta GA, US
    Brian W. Arbuckle - Danville CA, US
    Ion Bita - San Jose CA, US
    Manish Kothari - Cupertino CA, US
    Patrick F. Brinkley - San Mateo CA, US
    Gang Xu - Cupertino CA, US
    Nassim Khonsari - Redwood City CA, US
    Jonathan C. Griffiths - Fremont CA, US
  • Assignee:
    QUALCOMM MEMS Technologies, Inc. - San Diego CA
  • International Classification:
    G02B 5/28
    G03C 5/00
  • US Classification:
    359580, 359589, 359900, 347 2, 427466, 430 7, 430321
  • Abstract:
    Methods of fabricating a static interferometric image device and static interferometric image device formed by the same are disclosed. In one embodiment, a method includes providing a substrate. A plurality of liquid layers are formed over the substrate by an inkjet process such that the layers are lateral to one another. The liquid layers contain a solidifiable material or particles. Then, the plurality of liquid layers are solidified to form a plurality of solid layers. In some embodiments, the substrate includes pre-defined cavities, and the liquid layers are formed in the cavities. In other embodiments, the substrate includes a substantially planar, stepped, or continuously transitioning surface, and the liquid layers are formed on the surface. The inkjet process provides optical fillers or spacers for defining interferometric gaps between absorbers and reflectors in the display device, based at least partially on an image that the display device is designed to display.

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