Jack Neely Jewell

US Patent:

47671963, Aug 30, 1988

Filed:

Dec 14, 1987

Appl. No.:

7/132694

Inventors:

Jack L. Jewell - Bridgewater NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

G02F 300
G02F 1015

US Classification:

350354

Abstract:

A radiant energy logic element includes first and second reflecting devices and a radiant energy nonlinear medium between said first and second reflecting devices and in contact therewith. Radiant energy beams of first and second wavelengths are applied to the reflecting devices. The first reflecting device is transmissive at said second radiant energy beam wavelength and reflective at said first radiant energy beam wavelength, and said second reflecting device is reflective at said first and second radiant energy beam wavelengths. The nonlinear medium of the logic element is responsive to radiant energy beams applied to the first reflecting device but insensitive to radiant energy beams applied to the second reflecting device.

US Patent:

52068722, Apr 27, 1993

Filed:

Nov 1, 1991

Appl. No.:

7/786653

Inventors:

Jack L. Jewell - Bridgewater NJ
Axel Scherer - Matawan NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01S 319

US Classification:

372 46

Abstract:

Reduction of laser threshold in an electrically pumped vertical cavity laser is the consequence of interpositioning of an electrode layer intermediate the active, photon producing region, and at least one of the two Distributed Bragg Reflectors defining the laser cavity. The advance is a consequence of the lowered pump circuit resistance due to elimination of one or both DBRs--in particular, to elimination of the p-doped DBR--from the pump circuit.

US Patent:

47415878, May 3, 1988

Filed:

Feb 20, 1986

Appl. No.:

6/831175

Inventors:

Jack L. Jewell - Bridgewater NJ
Kuochou Tai - Westfield NJ
Akira Tomita - New Providence NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

G02B 626
G02F 100

US Classification:

350 9615

Abstract:

Optical pulses of nominal frequency f. sub. o and of predetermined repetition rate. tau. sub. M. sup. -1 can be generated by means of the induced modulational instability in single mode optical fiber, provided the fiber has anomalous dispersion at f. sub. o. A particularly advantageous method for generating such pulses that is capable of very high repetition rates is disclosed. The method involves coupling first and second cw or quasi cw optical radiation, of frequencies f. sub. 1 and f. sub. 2, respectively, into the optical fiber. Frequently one of the two radiations has much greater amplitude than the other. The resultant radiation in the fiber has frequency f. sub. o between f. sub. 1 and f. sub. 2, and is sinusoidally modulated with frequency. vertline. f. sub. 1 -f. sub. 2. vertline. Propagation of the resultant radiation through the fiber results in steepening and narrowing of the amplitude peaks.

US Patent:

49998420, Mar 12, 1991

Filed:

Mar 1, 1989

Appl. No.:

7/317699

Inventors:

Kai-Feng Huang - Shenchu, CN
Jack L. Jewell - Bridgewater NJ
Samuel L. McCall - Gillette NJ
Kuochou Tai - North Plainfield NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01S 319

US Classification:

372 45

Abstract:

Distributed feedback mirror cavities are found capable of sufficient reflectance-loss characteristics to permit lasing in two or a single quantum well structure in which lasing is in the thin (quantum) dimension. Such lasers sometimes known as "quantum well surface emitting lasers" are of sufficiently low threshold value as to permit use in integrated circuits of high integration density--e. g. at 1 micron design rules. Anticipated uses, now made possible, include optical circuitry for computer chip interconnect as well as optoelectric integrated circuits for many purposes including computing itself.

US Patent:

50343440, Jul 23, 1991

Filed:

Jun 18, 1990

Appl. No.:

7/538577

Inventors:

Jack L. Jewell - Bridgewater NJ
Axel Scherer - Matawan NJ

Assignee:

Bell Communications Research, Inc. - Livingston NJ
AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 21306
H01L 21329
H01L 2180
H01L 29205

US Classification:

437129

Abstract:

A method of making a vertical-cavity surface emitting laser and method of making in which a III-V heterostructure is epitaxially grown to include a quantum well active region between two interference mirrors separated by an emitting wavelength of the quantum well region. A small pillar of this heterostructure is etched by chemically assisted xenon ion beam etching. Prior to etching, a top metal contact is deposited on the epitaxial semiconductor. Light is emitted through the substrate having a bandgap larger than that of the quantum well region.

US Patent:

47010304, Oct 20, 1987

Filed:

Mar 15, 1985

Appl. No.:

6/712212

Inventors:

Jack L. Jewell - Bridgewater NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

G02F 101
G02F 1015
G02F 117

US Classification:

350354

Abstract:

An optical logic element in which energy absorption is approximately constant is described.

US Patent:

47566060, Jul 12, 1988

Filed:

Jun 5, 1986

Appl. No.:

6/870842

Inventors:

Jack L. Jewell - Bridgewater NJ
Samuel L. McCall - Chatham NJ

Assignee:

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murray Hill NJ

International Classification:

G02B 523
G02B 530
H01S 310

US Classification:

350354

Abstract:

The inventive method for forming monolithic nonlinear Fabry-Perot etalons comprises depositing on an appropriate substrate, e. g. , a GaAs wafer, a first multilayer mirror, depositing on the first mirror a spacer typically comprising optically nonlinear material, and depositing a second multilayer mirror onto the spacer. Typically, at least one of the mirrors is an active mirror comprising optically nonlinear material. Deposition can be by a known process, e. g. , by MBE or MOCVD. Since, inter alia, the method comprises no critical etching steps it can be used to produce high finesse etalons that have uniform properties over relatively large areas. The inventive method can be adapted to the manufacture of transmissive etalons. It can also be used to produce arrays of optically isolated etalons. Devices comprising nonlinear etalons manufactured by the inventive method can be incorporated, for instance, into optical data processing apparatus, or into optical communications apparatus.

US Patent:

46308989, Dec 23, 1986

Filed:

Oct 14, 1983

Appl. No.:

6/542003

Inventors:

Jack L. Jewell - Bridgewater NJ

International Classification:

G02F 103
G02F 117
G02F 300

US Classification:

350354

Abstract:

An optical logic apparatus includes a plurality of logic elements on a single passive, nonlinear Fabry-Perot etalon characterized by a shift in transmissivity in response to increased incident light, a source producing a probe beam having a first wavelength which does not significantly modify the index or refraction of the nonlinear medium, and a plurality of sources of input beams each representing a respective logic signal. The input beams all have a wavelength which significantly modifier the index of refraction of the nonlinear medium. The probe beams illuminate the surface of the etalon. The input beams are mapped by a lens onto the etalon, which produces a plurality of output beams each representing various logical functions of the input beams, which logical functions are determined by the frequency of the various probe beams. The output beams become input beams which are optically mapped, in combination with additional probe beams, onto a second etalon. The outputs of the second etalon can be similarly mapped onto further etalons or into the first etalon.