Semiconductor device annealing process with deuterium at superatmospheric pressures to improve reduction of the effects of hot carrier stress during device operation, and devices produced thereby.
Semiconductor device annealing process with deuterium at superatmospheric pressures to improve reduction of the effects of hot carrier stress during device operation, and devices produced thereby.
Scanning Probe And Electron Microscope Probes And Their Manufacture
Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.
Scanning Probe And Electron Microscope Probes And Their Manufacture
Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.
Scanning Probe And Electron Microscope Probes And Their Manufacture
- West Chester PA, US Gregory S. Girolami - Urbana IL, US Scott P. Lockledge - West Chester PA, US Jinju Lee - Champaign IL, US
International Classification:
G01Q 70/10 G01Q 60/00
Abstract:
Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.