James Arnold Freeman

US Patent:

7017662, Mar 28, 2006

Filed:

Nov 18, 2004

Appl. No.:

10/992168

Inventors:

Roger L. Schultz - Aubrey TX, US
James J. Freeman - Houston TX, US
Paul F. Rodney - Houston TX, US

Assignee:

Halliburton Energy Services, Inc. - Houston TX

International Classification:

E21B 47/12

US Classification:

1662542, 166 651, 166 66, 7315203, 7315231

Abstract:

In at least some embodiments, a tool may comprise a tool body and one or more tool components. The tool may further comprise tool electronics located within the tool body, wherein the tool electronics are operable to sense and store tool component characteristics and environmental characteristics. At least some of the tool electronics are operable, at least for one week, when exposed to temperatures of at least 200 Celsius. The tool electronics may be integrated circuits formed on a silicon carbide substrate or a silicon on sapphire substrate. One illustrative embodiment of the tool is a drill bit for employment in a high temperature drill well.

US Patent:

7442932, Oct 28, 2008

Filed:

Nov 18, 2004

Appl. No.:

10/992557

Inventors:

Roger L. Schultz - Aubrey TX, US
James J. Freeman - Houston TX, US
Neal G. Skinner - Lewisville TX, US
Steven G. Streich - Duncan OK, US

Assignee:

Halliburton Energy Services, Inc. - Houston TX

International Classification:

G01J 5/00

US Classification:

2503381, 25033802

Abstract:

High temperature imaging devices are disclosed. In one embodiment, the imaging device comprises an array of photosensitive elements fabricated on an insulator substrate, and an information storage component coupled to the array. The information storage component stores data representing one or more light patterns detected by the array. The light patterns may be images or spectral patterns. The insulator substrate may be a sapphire or spinel substrate. Alternatively, the substrate may be silicon carbide or an insulated silicon substrate. In at least some embodiments, a processor is integrated on the same substrate as the array.

US Patent:

20050104104, May 19, 2005

Filed:

Nov 18, 2004

Appl. No.:

10/992144

Inventors:

Roger Schultz - Aubrey TX, US
James Freeman - Houston TX, US

Assignee:

Halliburton Energy Services, Inc. - Houston TX

International Classification:

G11C011/22

US Classification:

257295000

Abstract:

Disclosed herein are various nonvolatile integrated device embodiments suitable for use at high temperatures. In some embodiments, a high temperature nonvolatile integrated device comprises a sapphire or spinel substrate having multiple ferroelectric memory cells disposed upon it. In other embodiments, a high temperature nonvolatile integrated device comprises a silicon on insulator substrate or a large bandgap semiconductor substrate having multiple ferroelectric or magnetic memory cells disposed on it. In yet other embodiments, a high temperature nonvolatile integrated device comprises a sapphire, silicon on insulator, or a large bandgap substrate having programmable read only memory (PROM) cells or electrically erasable PROM (EEPROM) cells disposed on it.

US Patent:

20090251960, Oct 8, 2009

Filed:

Apr 7, 2008

Appl. No.:

12/098549

Inventors:

Roger L. Schultz - Aubrey TX, US
James J. Freeman - Houston TX, US

Assignee:

Halliburton Energy Services, Inc. - Houston TX

International Classification:

H01L 29/12
G11C 16/04
G11C 11/02
G11C 11/22

US Classification:

36518501, 365145, 365158, 257 77, 257E29068

Abstract:

Disclosed herein are various nonvolatile integrated device embodiments suitable for use at high temperatures. In some embodiments, a high temperature nonvolatile integrated device comprises a sapphire or spinel substrate having multiple ferroelectric memory cells disposed upon it. In other embodiments, a high temperature nonvolatile integrated device comprises a silicon on insulator substrate or a large bandgap semiconductor substrate having multiple ferroelectric or magnetic memory cells disposed on it. In yet other embodiments, a high temperature nonvolatile integrated device comprises a sapphire, silicon on insulator, or a large bandgap substrate having programmable read only memory (PROM) cells or electrically erasable PROM (EEPROM) cells disposed on it.