James Hong

US Patent:

62952285, Sep 25, 2001

Filed:

Feb 28, 2000

Appl. No.:

9/514933

Inventors:

Joseph G. Pawletko - Germantown MD
Binh Quang Le - Mountain View CA
James M. Hong - Los Angeles CA

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

G11C 1606

US Classification:

36518522

Abstract:

A programming control circuit programs a memory cell in accordance to a programming signal value that can be varied by a test equipment. The programming control circuit comprises a signal storage device, a signal output circuit, and a verification circuit. The signal storage device stores the programming signal value. The test equipment can be coupled to the signal storage device to write the programming signal value into the signal storage device. The signal output circuit is coupled to the signal storage device to receive the programming signal value. The signal output circuit converts the programming signal value into a programming signal and outputs the programming signal to the memory cell. The verification circuit determines whether the memory cell is successfully programmed. If the memory cell is not successfully programmed, the programming control circuit increases the programming signal value.

US Patent:

63044870, Oct 16, 2001

Filed:

Feb 28, 2000

Appl. No.:

9/514404

Inventors:

Joseph G. Pawletko - Germantown MD
Binh Quang Le - Mountain View CA
James M. Hong - Los Angeles CA

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

G11C 1606

US Classification:

36518522

Abstract:

A voltage control circuit that programs or erases memory cells comprises an internal voltage value store, a register device selectively coupled to an external voltage value source or the internal voltage value store to receive a voltage value, a voltage output circuit coupled to the register device to receive the voltage value and to output a corresponding voltage to the memory cells, and a verify circuit determining the time to successfully program or erase the memory cells. The register device allows the memory cells to be programmed or erased with voltage values designated by the external voltage value source to determine programming and erasing characteristics of the memory cells. Voltage values producing acceptable programming and erasing characteristics are saved in the internal voltage value store.

US Patent:

62466119, Jun 12, 2001

Filed:

Feb 28, 2000

Appl. No.:

9/514560

Inventors:

Joseph G. Pawletko - Germantown MD
Binh Quang Le - Mountain View CA
James M. Hong - Los Angeles CA

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

G11C 1600

US Classification:

36518529

Abstract:

An erase control circuit erases a memory cell in accordance to an erase signal value that can be varied by a test equipment. The erase control circuit comprises a signal storage device, a signal output circuit, and a verification circuit. The signal storage device stores the erase signal value. A test equipment can be coupled to the signal storage device to write the programming signal value into the signal storage device. The signal output circuit is coupled to the signal storage device to receive the erase signal value. The signal output circuit converts the erase signal value into an erase signal and outputs the erase signal to the memory cell. The verification circuit determines whether the memory cell is successfully erased. If the memory cell is not successfully erased, the erase control circuit increases the erase signal value.