Henry V. Allen - Fremont CA, US Stephen C. Terry - Palo Alto CA, US James W. Knutti - Fremont CA, US
Assignee:
Silicon Microstructures, Inc. - Milpitas CA
International Classification:
G01L 7/08 G01L 9/00
US Classification:
73715
Abstract:
Methods and apparatus for an absolute or gauge pressure sensor having a backside cavity with a substantially vertical interior sidewall. The backside cavity is formed using a DRIE etch or other MEMS micro-machining technique. One embodiment provides for a diaphragm having a boss manufactured using a two step process that results in a boss thickness that is independent of the thickness of the starting material. Another provides for various shapes to the backside cavity that reduces the likelihood of crystalline fractures while focusing stress on piezoresistive sensing elements. Another provides for a sensitivity adjustment by thinning the insulating and silicon layers that form the sensor diaphragm. A pressure sensor according to the present invention may incorporate one or more of these, or may incorporate other elements discussed herein.
Lloyd D. Ingle - Valley Center CA Henry V. Allen - Fremont CA James W. Knutti - Fremont CA
Assignee:
Hybond, Inc. - Escondido CA
International Classification:
G01M 700 G01F 1375 B25J 1900
US Classification:
364550
Abstract:
A dynamic force measurement system for taking a series of force measurements of a force applied against a sensor device whereby to determine, record, display and store the sequence of force measurements. The sensor device is adapted to respond to said force and provide an electronic force signal which is representative thereof. The dynamic force measurement system includes a central processing unit for operating a computer program, having data and program instruction storage means, graphic display and user interface means. A sensor interface device provides for the connecting of the sensor device to the central processing unit. The sensor interface device includes means for monitoring the force signal generated by the sensor device, converting the signal to a numerical binary format for recording in intermediate storage means within the sensor interface device for ultimate transfer to the central processing unit for display, statistical analysis and storage.
Kurt E. Petersen - San Jose CA Henry V. Allen - Fremont CA James W. Knutti - Fremont CA
Assignee:
Transensory Devices, Inc. - Fremont CA
International Classification:
H01H 3534
US Classification:
200 83N
Abstract:
A microminiature switch for digitizing different-valued external conditions, such as pressure, temperature of acceleration, is disclosed. The switch includes a silicon wafer having a deflectable, reduced-thickness membrane adapted to move from a relaxed position toward increasingly flexed or bulged positions in response to greater-value changes in such external condition. Movement of the membrane from its relaxed position to more strained positions establishes electrical contact between a common terminal and first one and then progressively more switch-state terminals in the switch, wherein the number of switch states which are closed corresponds to the external condition acting on the switch.
James W. Knutti - Fremont CA Henry V. Allen - Fremont CA Kurt E. Petersen - San Jose CA Carl R. Kowalski - Fremont CA
Assignee:
Tactile Perceptions, Inc. - Fremont CA
International Classification:
H01L 2984 G01L 118
US Classification:
156633
Abstract:
A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second surface (28) which is substantially parallel to the first surface and has a pedestal (16) projecting therefrom which is disposed above the well. The side walls (32) of the pedestal are substantially orthogonal to the second surface of the semiconductor layer and are formed by sawing edge portions of said semiconductor layer. The substrate includes structures (38) which extend upward from the bottom of the well to limit the deflection of the diaphragm.
James W. Knutti - Fremont CA Henry V. Allen - Fremont CA Kurt E. Petersen - San Jose CA Carl R. Kowalski - Fremont CA
Assignee:
Tactile Perceptions, Inc. - Fremont CA
International Classification:
H01L 2984 G01B 716
US Classification:
357 26
Abstract:
A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second surface (28) which is substantially coplanar to the first surface and has a pedestal (16) projecting therefrom which is disposed above the well. The side walls (32) of the pedestal are substantially orthogonal to the second surface of the semiconductor layer. Means (34) are provided for sensing the deflection of the diaphragm as a function of force applied to the pedestal. The substrate includes protrusions (38) which extend upward from the bottom of the well to limit the deflection of the diaphragm.
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