James L Larrauri

US Patent:

20170170821, Jun 15, 2017

Filed:

Dec 9, 2016

Appl. No.:

15/374774

Inventors:

- Haverhill MA, US
James L. Larrauri - North Port FL, US
Simon P. Wainwright - Newburyport MA, US
Max Zafrani - Swampscott MA, US

International Classification:

H03K 17/0812
H01L 29/20
H01L 29/778
G01R 15/04
G01R 19/165

Abstract:

A detection circuit includes an under-voltage circuit. The under-voltage circuit includes a first GaN high electron mobility transistor (HEMT) configured to operate as both a voltage comparator and a voltage reference. The detection circuit can also include an over-voltage detection circuit. The over-voltage detection circuit includes a second GaN HEMT that is also configured to operate as both a voltage comparator and a voltage reference. Each of the under-voltage circuit and over-voltage circuit includes a GaN HEMT logic inversion element to provide electrical hysteresis. Also, the under-voltage detection circuit and the over-voltage detection circuit are configured to provide outputs to a single ‘power good’ terminal. The first GaN HEMT can be configured to use its gate source threshold voltage for voltage comparison and reference. The second GaN HEMT can be configured to use its gate source threshold voltage for voltage comparison and reference.