James D Mullins

US Patent:

20040013937, Jan 22, 2004

Filed:

Jul 15, 2003

Appl. No.:

10/620750

Inventors:

James Mullins - Peoria AZ, US
William Mehlhaff - Peoria AZ, US

International Classification:

H01M002/12

US Classification:

429/082000, 429/090000

Abstract:

A method and system for the prevention of corrosion of objects located close to a wet cell storage battery caused by evaporation, and subsequent condensation, of electrolyte from a wet cell storage battery. Convenient methods for installation and removal of the system are included. Additionally, convenient and safe storage methods are also provided.

US Patent:

57504407, May 12, 1998

Filed:

Nov 20, 1995

Appl. No.:

8/559669

Inventors:

James F. Vanell - Tempe AZ
Steven D. Ward - Phoenix AZ
James M. Mullins - Austin TX

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

B24B 5704
B24B 100

US Classification:

438692

Abstract:

An apparatus and a method of dynamically mixing a slurry for a chemical mechanical polish includes pumping an abrasive (33) and an oxidizer (37) into a first portion (19) of a slurry mixer (11), using a magnetically coupled stirrer (17) to blend the abrasive (33) and the oxidizer (37) into a slurry (41) in the first portion (19) of the slurry mixer (11), transporting the slurry (41) through a diffuser (21) and into a second portion (22) of the slurry mixer (11), keeping the slurry (41) in the second portion (22) of the slurry mixer (11) for a residence time, and, subsequently, using the slurry (41) to chemical mechanical polish a semiconductor substrate (43). The diffuser (21) reduces air entrainment of the slurry (41), and the residence time enables the slurry (41) to be used when it has a maximum polishing rate.

US Patent:

20220379426, Dec 1, 2022

Filed:

May 31, 2021

Appl. No.:

17/334829

Inventors:

- Portland OR, US
James Mal - Portland OR, US
Adam Marion - Beaverton OR, US
Stan Meek - Portland OR, US
James Mullins - Hillsboro OR, US

International Classification:

B24B 27/06
B24B 55/02
B24B 51/00

Abstract:

A method cuts semiconductor wafers. The method includes: cutting a semiconductor ingot into a workpiece; and sawing the workpiece into slices using a wire grid having a fixed abrasive grain wire, while moving workpiece towards the wire grid. At a first contact of the workpiece with the wire grid, an initial cutting speed is less than 2 mm/min, coolant flow is less than 0.1 l/h and a wire speed is greater than 20 m/s. The workpiece is then guided through the wire grid until a first cutting depth is reached, and then the coolant flow is increased to at least 2000 l/h. The cutting speed is reduced to less than 70% of the initial cutting speed between the first contact of the workpiece with the wire grid up to a cutting depth of half a diameter of the cylinder, and is then increased.