According to an example embodiment, the present invention is directed to a method for manufacturing a semiconductor device. The device comprises a light-reflective layer and an anti-reflective coating layer over the light-reflective layer. A material is located over the anti-reflective coating layer. The semiconductor is selectively etched using a non-polymerizing oxygen-rich fluorocarbon chemistry. By using an oxygen-rich fluorocarbon chemistry, the use of a polymerizing etchant is eliminated, making the manufacture of such devices simpler.
Low Resistance Gate For Power Mosfet Applications And Method Of Manufacture
Sreevatsa Sreekantham - West Jordan UT, US Ihsiu Ho - Salt Lake City UT, US Fred Session - Sandy UT, US James Kent Naylor - Kaysville UT, US
International Classification:
H01L 21/336 H01L 21/3205
US Classification:
438270, 438272, 438589
Abstract:
A trench gate field effect transistor is formed as follows. A trench is formed in a semiconductor region, followed by a dielectric layer lining sidewalls and bottom of the trench and extending over mesa regions adjacent the trench. A conductive seed layer is formed in a bottom portion of the trench over the dielectric layer. A low resistance material is grown over the conductive seed layer, wherein the low resistance material is selective to the conductive seed layer.
Apparatuses, Systems And Methods For Applying Protective Coatings To Electronic Device Assemblies
Max Sorenson - Cottonwood Heights UT, US James Kent Naylor - Kaysville UT, US
Assignee:
HzO, Inc. - Draper UT
International Classification:
C23C 16/02
US Classification:
427 58, 118 72, 118719, 118715
Abstract:
A coating apparatus may be configured to concurrently receive and waterproof a large number of electronic device assemblies. The coating apparatus may include a track for transporting the electronic device assemblies into an application station. The application station may have a cubic shape, and include an entry door and an opposite exit door. The entry and exit doors may enable the introduction of substrates into the application station, as well as their removal from the application station. In addition, the entry and exit doors may enable isolation of the application station from an exterior environment and, thus, provide control over the conditions under which a moisture resistant material is applied to the substrates. Methods for making electronic devices and other substrates resistant to moisture are also disclosed.