James L Rosenberg

US Patent:

45831050, Apr 15, 1986

Filed:

Dec 30, 1982

Appl. No.:

6/454741

Inventors:

James J. Rosenberg - Bronx NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2978
H01L 29205
H01L 2980

US Classification:

357 2312

Abstract:

This invention relates to an improved heterojunction FET. More specifically the invention is directed to a heterojunction FET device in which the contact to the semiconductor gate is ohmic in character. The gate and channel regions of the FET have the same barrier height relative to an intervening third layer of semiconductor and sandwich the third layer of undoped semiconductor. The resulting symmetry of the structure provides a threshold voltage which lies normally near zero volts and is controllable upwardly or downwardly by adding an n or p type dopant to the undoped third layer or region.

US Patent:

45500479, Oct 29, 1985

Filed:

Jun 6, 1983

Appl. No.:

6/501571

Inventors:

Thomas N. Jackson - Peekskill NY
Peter D. Kirchner - Crompond NY
George D. Pettit - Mahopac NY
James J. Rosenberg - Bronx NY
Jerry M. Woodall - Bedford Hills NY
Steven L. Wright - Yorktown Heights NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B32B 310
C30B 2304

US Classification:

428136

Abstract:

A quantity of silicon serving as a source of the element silicon for use in a molecular beam epitaxial growth apparatus where the silicon is in the form of a monocrystalline wafer with a plurality of electrically parallel filaments separated by slots that pass completely through the wafer, each filament having a length dimension that is greater than the width and height dimensions, joined at a broad contact area at each filament end and where an electric current is passed through the filaments through the broad contact areas.