Jane P Manning

US Patent:

8163638, Apr 24, 2012

Filed:

Sep 15, 2010

Appl. No.:

12/883045

Inventors:

Denis De Ceuster - Woodside CA, US
Peter John Cousins - Menlo Park CA, US
Richard M. Swanson - Los Altos Hills CA, US
Jane E. Manning - Woodside CA, US

Assignee:

SunPower Corporation - San Jose CA

International Classification:

H01L 21/225
H01L 31/0224

US Classification:

438558, 438 71, 438 87, 438 98, 257448, 257457, 257E31119, 257E31124, 257E3113, 257E21145, 257E21469, 136256, 136255

Abstract:

In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.

US Patent:

8409912, Apr 2, 2013

Filed:

Sep 15, 2010

Appl. No.:

12/883035

Inventors:

Denis de Ceuster - Woodside CA, US
Peter John Cousins - Menlo Park CA, US
Richard M. Swanson - Los Altos Hills CA, US
Jane E. Manning - Woodside CA, US

Assignee:

SunPower Corporation - San Jose CA

International Classification:

H01L 21/00

US Classification:

438 98, 257465, 257E3113

Abstract:

In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.

US Patent:

8492253, Jul 23, 2013

Filed:

Dec 2, 2010

Appl. No.:

12/959199

Inventors:

Jane Manning - Woodside CA, US

Assignee:

SunPower Corporation - San Jose CA

International Classification:

H01L 21/22
H01L 21/38

US Classification:

438563, 438548, 438558, 438 57, 438907, 438908, 438913, 257461, 257E25007, 136252, 136258

Abstract:

Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin dielectric layer, forming and patterning a solid-state p-type dopant source on the polysilicon layer, forming an n-type dopant source layer over exposed regions of the polysilicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped polysilicon regions among a plurality of p-type doped polysilicon regions.

US Patent:

20070151598, Jul 5, 2007

Filed:

Dec 20, 2006

Appl. No.:

11/643743

Inventors:

Denis De Ceuster - Woodside CA, US
Peter Cousins - Muntinlupa, PH
Richard Swanson - Los Altos CA, US
Jane Manning - Woodside CA, US

International Classification:

H01L 31/00

US Classification:

136256000

Abstract:

In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.

US Patent:

20110264508, Oct 27, 2011

Filed:

Jun 30, 2011

Appl. No.:

13/174340

Inventors:

George R. Harik - Mountain View CA, US
Salar Arta Kamangar - Palo Alto CA, US
Jane Manning - Palo Alto CA, US
Lawrence E. Page - Palo Alto CA, US
Eric Veach - Mountain View CA, US

International Classification:

G06Q 30/00

US Classification:

705 1442, 705 144, 705 1473

Abstract:

An ordering of advertisements requested by an ad consumer is based on scores generated for the ads. In each case, a score may be a function of at least one performance parameter associated with the ad and/or a price parameter associated with the ad. The score may also be a function of advertiser information. Alternatively, the score may be modified based on advertiser information. Ads may be filtered based on advertiser information.

US Patent:

20130291940, Nov 7, 2013

Filed:

Jun 28, 2013

Appl. No.:

13/930078

Inventors:

Jane Manning - Woodside CA, US

International Classification:

H01L 31/0224

US Classification:

136256, 438 98

Abstract:

Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.

US Patent:

20170263795, Sep 14, 2017

Filed:

May 22, 2017

Appl. No.:

15/601929

Inventors:

- San Jose CA, US
Helen Liu - El Cerrito CA, US
Tim Dennis - Canton TX, US
Jane Manning - Woodside CA, US
Hsin-Chiao Luan - Palo Alto CA, US
Ann Waldhauer - La Honda CA, US
Genevieve A. Solomon - Palo Alto CA, US
Brenda Pagulayan Malgapu - Carmona, PH
Joseph Ramirez - Batangas City, PH

International Classification:

H01L 31/0368
H01L 31/20
H01L 31/18
H01L 31/0376
H01L 31/0216

Abstract:

Methods of fabricating emitter regions of solar cells are described. Methods of forming layers on substrates of solar cells, and the resulting solar cells, are also described.

US Patent:

20170249664, Aug 31, 2017

Filed:

May 12, 2017

Appl. No.:

15/593908

Inventors:

- Mountain View CA, US
Lawrence E. Page - Palo Alto CA, US
Jane Manning - Palo Alto CA, US

International Classification:

G06Q 30/02
G06F 17/30

Abstract:

An ordering of advertisements requested by an ad consumer is based on scores generated for the ads. In each case, a score may be a function of at least one performance parameter associated with the ad. The ad consumer may generate presentation information (e.g., a Web page) including advertisements and non-advertisement content (e.g., search results) by (i) accepting the non-advertisement content and advertisements, each of the advertisements including a score, and (ii) combining the non-advertisement content and the advertisements such that relative placements of the advertisements are based on their associated scores.