Jang Jung Lee

US Patent:

20150129993, May 14, 2015

Filed:

Feb 3, 2014

Appl. No.:

14/171574

Inventors:

- Gyeonggi-do, KR
Jang Eun Lee - Cupertino CA, US

Assignee:

Samsung Electronics Co., LTD. - Gyeonggi-do

International Classification:

H01L 43/10
H01L 43/12

US Classification:

257421, 438 3

Abstract:

A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer includes at least one of a hybrid perpendicular magnetic anisotropy (PMA) structure and tetragonal bulk perpendicular magnetic anisotropy (B-PMA) structure. At least one of the free layer and the pinned layer have a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

US Patent:

20150129996, May 14, 2015

Filed:

Feb 19, 2014

Appl. No.:

14/184664

Inventors:

- Gyeonggi-do, KR
Jang Eun Lee - Cupertino CA, US
Kiseok Moon - Pleasanton CA, US

Assignee:

Samsung Electronics Co., LTD. - Gyeonggi-do

International Classification:

H01L 43/12
H01L 43/02
H01L 27/22
H01L 43/08

US Classification:

257427, 438 3, 257421

Abstract:

A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. A free layer and nonmagnetic spacer layer are provided. The free layer and nonmagnetic spacer layer are annealed at an anneal temperature of at least three hundred fifty degrees Celsius. A pinned layer is provided after the annealing step. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

US Patent:

20150129997, May 14, 2015

Filed:

Feb 19, 2014

Appl. No.:

14/184684

Inventors:

- Gyeonggi-do, KR
Jang Eun Lee - Cupertino CA, US

Assignee:

Samsung Electronics Co., LTD. - Gyeonggi-do

International Classification:

H01L 43/12
H01L 27/22
H01L 43/02
H01L 43/08

US Classification:

257427, 438 3, 257421

Abstract:

A method for providing a dual magnetic junction usable in a magnetic device and the dual magnetic junction are described. First and second nonmagnetic spacer layers, a free layer and pinned are provided. The first pinned layer, free layer and nonmagnetic spacer layer may be annealed at an anneal temperature of at least three hundred fifty degrees Celsius before a second pinned layer is provided. The second pinned layer may include Co, Fe and Tb. The nonmagnetic spacer layers are between the pinned layers and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.