Jeffrey L Barnes

US Patent:

20080076688, Mar 27, 2008

Filed:

Sep 21, 2006

Appl. No.:

11/524619

Inventors:

Jeffrey A. Barnes - Bath PA, US
Elizabeth Walker - Nazareth PA, US
Darryl W. Peters - Stewartsville NJ, US
Kyle Bartosh - Northampton PA, US
Ewa R. Oldak - Fountain Hill PA, US
Kevin P. Yanders - Germansville PA, US

International Classification:

B08B 7/00
C11D 7/32

US Classification:

510175, 134 42

Abstract:

Alkaline aqueous cleaning compositions and processes for cleaning post-chemical mechanical polishing (CMP) residue, post-etch residue and/or contaminants from a microelectronic device having said residue and contaminants thereon. The alkaline aqueous cleaning compositions include amine, passivating agent, and water. The composition achieves highly efficacious cleaning of the residue and contaminant material from the microelectronic device while simultaneously passivating the metal interconnect material.

US Patent:

20090239777, Sep 24, 2009

Filed:

Mar 23, 2009

Appl. No.:

12/409267

Inventors:

David Angst - New Tripoli PA, US
Peng Zhang - Montvale NJ, US
Jeffrey Barnes - New Milford CT, US
Prerna Sonthalia - Mumbai, IN
Emanuel Cooper - Scarsdale NY, US
Karl Boggs - Hopewell Junction NY, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

C11D 7/32

US Classification:

510175

Abstract:

An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

US Patent:

20160322232, Nov 3, 2016

Filed:

Dec 19, 2014

Appl. No.:

15/105833

Inventors:

- Billerica MA, US
- Suwon, KR
Jaeseok LEE - Suwon, KR
WonLae KIM - Suwon, KR
Jeffrey A. BARNES - Danielsville PA, US

International Classification:

H01L 21/311
H01L 21/02
G03F 7/42
H01L 21/027

Abstract:

A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.