Jeffrey C Barnes

US Patent:

20180240680, Aug 23, 2018

Filed:

Feb 9, 2018

Appl. No.:

15/892775

Inventors:

- Billerica MA, US
Emanuel I. Cooper - Scarsdale NY, US
Jaeseok Lee - Suwon, KR
WonLae Kim - Suwon, KR
Jeffrey A. Barnes - Danielsville PA, US

International Classification:

H01L 21/311
H01L 21/027
G03F 7/42
H01L 21/02

Abstract:

A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.

US Patent:

20170096624, Apr 6, 2017

Filed:

Dec 19, 2016

Appl. No.:

15/383210

Inventors:

- Danbury CT, US
Peng Zhang - Montvale NJ, US
Jeffrey Barnes - Bethlehem CT, US
Prema Sonthalia - Mumbai, IN
Emanuel Cooper - Scarsdale NY, US
Karl Boggs - Hopewell Junction NY, US

International Classification:

C11D 11/00
C11D 7/32
C11D 7/26
C11D 3/00

Abstract:

An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

US Patent:

20140318584, Oct 30, 2014

Filed:

Jan 12, 2012

Appl. No.:

13/978825

Inventors:

Emanuel I. Cooper - Scarsdale NY, US
Jeffrey A. Barnes - Bethlehem CT, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

H01L 21/02

US Classification:

134 42, 510175, 510176

Abstract:

Compositions and methods for removing lanthanoid-containing solids and/or species from the surface of a microelectronic device or microelectronic device fabrication hardware. Preferably, the lanthanoid-containing solids and/or species comprise cerium. The composition is preferably substantially devoid of fluoride ions.

US Patent:

20140206588, Jul 24, 2014

Filed:

Mar 25, 2014

Appl. No.:

14/224672

Inventors:

- Danbury CT, US
Peng Zhang - Montvale NJ, US
Jeffrey Barnes - Bethlehem CT, US
Prerna Sonthalia - Mumbai, IN
Emanuel Cooper - Scarsdale NY, US
Karl Boggs - Hopewell Junction NY, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

C11D 3/00

US Classification:

510175, 510401, 510402

Abstract:

An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.