Jeffrey P Klug

US Patent:

8518179, Aug 27, 2013

Filed:

Feb 29, 2012

Appl. No.:

13/385661

Inventors:

Thomas Proslier - Woodbridge IL, US
Nicholas G. Becker - Chicago IL, US
Michael J. Pellin - Naperville IL, US
Jeffrey Klug - Westmont IL, US
Jeffrey W. Elam - Elmhurst IL, US

Assignee:

UChicago Argonne, LLC - Chicago IL

International Classification:

C30B 23/00
C30B 25/00
C30B 28/12
C30B 28/14

US Classification:

117 84, 427250, 427537

Abstract:

Systems and methods for producing crystalline materials by atomic layer deposition, allowing for high control of localized doping. Such materials may be fibers or films suitable for use in optoelectronics and lasers.

US Patent:

20120219824, Aug 30, 2012

Filed:

Feb 28, 2011

Appl. No.:

13/036952

Inventors:

Thomas Prolier - Woodridge IL, US
Jeffrey Elam - Elmhurst IL, US
Jeffrey Klug - Westmont IL, US
Michael J. Pellin - Naperville IL, US

International Classification:

B05D 5/12
B32B 15/00

US Classification:

428662, 427 62, 428544

Abstract:

A method of preparing a superconducting thin film of niobium silicide using atomic layer deposition (ALD) where the superconducting critical temperature of the film is controllable by modulating the thickness of the thin film. The film is formed by exposing a substrate within an ALD reactor to alternating exposures of a niobium halide (NbQ) and a reducing precursor, for example, disilane (SiH) or silane (SiH). A number of ALD cycles are performed to obtain the film thickness and establish the desired superconducting critical temperature between 0.4 K and 3.1 K.