Jeffrey Dean Patton

age ~60

from Salt Lake City, UT

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Also known as:

Jeffrey D Patton
Jeffrey R Patton
Jeff D Patton
Jeff R Patton
Jeff S Patton
Jeffrey D Parron
Jeff Dpatton

Phone and address:: 108 U St, Salt Lake City, UT 84103

Connected to:

Jeffrey Patton Phones & Addresses

108 U St, Salt Lake City, UT 84103
44 Broadway, Salt Lake City, UT 84101
108 N N St, Salt Lake City, UT 84103
Slc, UT
Heber City, UT
Park City, UT
Alameda, CA
North Salt Lake, UT

Isbn (Books And Publications)

A Geography of the Carolinas

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Author
Jeffrey C. Patton

ISBN #
1933251433

Applied Human Geography

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Author
Jeffrey Patton

ISBN #
0757516629

Medicine Doctors

Jeffrey F. Patton

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Specialties:

Hematology/Oncology

Work:

Tennessee Oncology
300 20 Ave N STE 301, Nashville, TN 37203
(615)3290570 (phone), (615)3207091 (fax)

Tennessee OncologyTennessee Oncology PLLC
397 Wallace Rd STE 201, Nashville, TN 37211
(615)3332481 (phone), (615)7813923 (fax)

Education:

Medical School
Eastern Virginia Medical School Medical College
Graduated: 1988

Procedures:

Chemotherapy

Conditions:

Gastric Cancer
Hodgkin's Lymphoma
Lung Cancer
Malignant Neoplasm of Colon
Malignant Neoplasm of Female Breast

Languages:

Chinese
English
Spanish

Description:

Dr. Patton graduated from the Eastern Virginia Medical School Medical College in 1988. He works in Nashville, TN and 1 other location and specializes in Hematology/Oncology. Dr. Patton is affiliated with Northcrest Medical Center, Saint Thomas Midtown Hospital, Tristar Centennial Medical Center, Tristar Skyline Medical Center and Tristar Southern Hills Medical Center.

Name / Title

Company / Classification

Phones & Addresses

Jeffrey Patton

PATTON FARMS, LTD

Jeffrey Patton

FOUR KINGS REAL ESTATE HOLDINGS LLC

Jeffrey Patton

WORLD WIDE WEB SOLUTIONS LTD

Jeffrey Patton

PATTON/SEGINOT, LLC

Jeffrey Patton

JEFFREY PATTON FOUNDATION

Jeffrey Patton

THE SARTOR/PATTON LLC

Jeffrey Patton

P&L CONSTRUCTION AND DEVELOPMENT, INC

Us Patents

Trenches To Reduce Lateral Silicide Growth In Integrated Circuit Technology
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US Patent:

7023059, Apr 4, 2006
Filed:

Mar 1, 2004
Appl. No.:

10/791094
Inventors:

Darin A. Chan - San Francisco CA, US
Simon Siu-Sing Chan - Saratoga CA, US
Jeffrey P. Patton - Santa Clara CA, US
Jacques J. Bertrand - Capitola CA, US
Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:

H01L 29/94
US Classification:

257382, 257213, 257288, 257368, 257386, 257387, 257388, 438584, 438597, 438682, 438683
Abstract:

A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. Source/drain junctions are formed in the semiconductor substrate. A silicide is formed on the source/drain regions and on the gate. Trenches are formed in the semiconductor substrate around the gate. An interlayer dielectric is deposited above the semiconductor substrate, and contacts are then formed to the silicide.

Reduction Of Lateral Silicide Growth In Integrated Circuit Technology
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US Patent:

7064067, Jun 20, 2006
Filed:

Feb 2, 2004
Appl. No.:

10/770905
Inventors:

Paul L. King - Mountain View CA, US
Simon Siu-Sing Chan - Saratoga CA, US
Jeffrey P. Patton - Santa Clara CA, US
Minh Van Ngo - Fremont CA, US
Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:

H01L 21/336
H01L 21/44
US Classification:

438682, 438299, 438663, 438664
Abstract:

A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. A sidewall spacer is formed around the gate. Source/drain junctions are formed in the semiconductor substrate. An intermediate phase silicide is formed on the source/drain regions and on the gate. The sidewall spacer is removed. A final phase silicide is formed from the intermediate phase silicide. An interlayer dielectric is deposited above the semiconductor substrate, and contacts are then formed in the interlayer dielectric to the final phase silicide.