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Jeffrey Allen Sabrowski

age ~51

from Stuart, FL

Also known as:
  • Jeffrey A Sabrowski
  • Jeffrey R Sabrowski
  • Jeff A Sabrowski
Phone and address:
6642 SE Woodmill Pond Ln, Stuart, FL 34997

Jeffrey Sabrowski Phones & Addresses

  • 6642 SE Woodmill Pond Ln, Stuart, FL 34997
  • Palm Beach Gardens, FL
  • Lubbock, TX
  • Leander, TX
  • Austin, TX
  • Rochester, MN
  • Anchorage, AK
  • Fairbanks, AK

Us Patents

  • Iimplementing Dram Command Timing Adjustments To Alleviate Dram Failures

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  • US Patent:
    20140068322, Mar 6, 2014
  • Filed:
    Aug 29, 2012
  • Appl. No.:
    13/598072
  • Inventors:
    Edgar R. Cordero - Round Rock TX, US
    Joab D. Henderson - Pflugerville TX, US
    Divya Kumar - Austin TX, US
    Jeffrey A. Sabrowski - Leander TX, US
    Anuwat Saetow - Austin TX, US
  • Assignee:
    INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
  • International Classification:
    G06F 11/14
  • US Classification:
    714 611, 714E11113
  • Abstract:
    A method, system and computer program product are provided for implementing command timing adjustments to alleviate Dynamic Random Access Memory (DRAM) failures in a computer system. A predefined DRAM failure is detected. Responsive to the detected failure, a set of timers is adjusted for controlling predetermined timings used to access the DRAM. Responsive to the failure being resolved by the adjusted set of timers, checking for a predetermined level of performance is performed.
  • Iimplementing Enhanced Hardware Assisted Dram Repair

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  • US Patent:
    20130179724, Jul 11, 2013
  • Filed:
    Jan 5, 2012
  • Appl. No.:
    13/343938
  • Inventors:
    Edgar R. Cordero - Round Rock TX, US
    Joab D. Henderson - Austin TX, US
    Divya Kumar - Austin TX, US
    Jeffrey A. Sabrowski - Leander TX, US
    Anuwat Saetow - Austin TX, US
  • Assignee:
    INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
  • International Classification:
    G06F 11/20
  • US Classification:
    714 63, 714E11089
  • Abstract:
    A method, system and computer program product are provided for implementing hardware assisted Dynamic Random Access Memory (DRAM) repair in a computer system that supports ECC. A data register providing DRAM repair is selectively provided in one of the Dynamic Random Access Memory (DRAM), a memory controller, or a memory buffer coupled between the DRAM and the memory controller. The data register is configured to map to any address. Responsive to the configured address being detected, the reads to or the writes from the configured address are routed to the data register.
  • System For Securing Contents Of Removable Memory

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  • US Patent:
    20180067874, Mar 8, 2018
  • Filed:
    Nov 8, 2017
  • Appl. No.:
    15/807187
  • Inventors:
    - Armonk NY, US
    Joab D. Henderson - Pflugerville TX, US
    Jeffrey A. Sabrowski - Leander TX, US
    Saravanan Sethuraman - Bangalore, IN
    Kenneth L. Wright - Austin TX, US
  • International Classification:
    G06F 12/14
    G06F 21/79
  • Abstract:
    This disclosure includes a method for securing a memory of an electronic system that includes initializing the memory, creating a security key, transmitting the security key to memory, storing the security key in the memory, transmitting the current security key and a a new security key to the memory by the memory controller. If the current security key transmitted is the same as the security key stored in memory, then access to the memory is enabled and the current security key in the memory is replaced with the new security key. If the current security key transmitted is not the same as the security key stored in the memory, then access to the memory is disabled.
  • Prioritizing Refreshes In A Memory Device

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  • US Patent:
    20160027494, Jan 28, 2016
  • Filed:
    Oct 8, 2015
  • Appl. No.:
    14/878174
  • Inventors:
    - Armonk NY, US
    Joab D. Henderson - Pflugerville TX, US
    Jeffrey A. Sabrowski - Leander TX, US
    Anuwat Saetow - Austin TX, US
  • International Classification:
    G11C 11/406
    G11C 11/4076
  • Abstract:
    A method and apparatus for refreshing a row of a memory device prior to a scheduled refresh. A memory array may include a plurality of memory cells. The memory array may be configured to be refreshed at a first refresh time interval. The memory device may also include an intermediate refresh circuit. The intermediate refresh circuit may be configured to detect a triggering event and request a refresh for a row of the memory array in response to detecting a triggering event.
  • Implementing Enhanced Reliability Of Systems Utilizing Dual Port Dram

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  • US Patent:
    20150278005, Oct 1, 2015
  • Filed:
    Jun 23, 2014
  • Appl. No.:
    14/312327
  • Inventors:
    - Armonk NY, US
    Carlos A. Fernandez - Hialeah FL, US
    Joab D. Henderson - Pflugerville TX, US
    Jeffrey A. Sabrowski - Leander TX, US
    Anuwat Saetow - Austin TX, US
    Saravanan Sethuraman - Bangalore, IN
  • International Classification:
    G06F 11/07
  • Abstract:
    A method, system and computer program product are provided for implementing enhanced reliability of memory subsystems utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. The DRAM configuration includes a first buffer and a second buffer, each buffer including a validity counter. The validity counter for a receiving buffer is incremented as each respective data row from a transferring buffer is validated through Error Correction Code (ECC), Reliability, Availability, and Serviceability (RAS) logic and transferred to the receiving buffer, while the validity counter for the transferring buffer is decremented. Data are read from or written to either the first buffer or the second buffer based upon a respective count value of the validity counters.
  • Implementing Enhanced Reliability Of Systems Utilizing Dual Port Dram

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  • US Patent:
    20150278086, Oct 1, 2015
  • Filed:
    Mar 27, 2014
  • Appl. No.:
    14/227187
  • Inventors:
    - Armonk NY, US
    Carlos A. Fernandez - Hialeah FL, US
    Joab D. Henderson - Pflugerville TX, US
    Jeffrey A. Sabrowski - Leander TX, US
    Anuwat Saetow - Austin TX, US
    Saravanan Sethuraman - Bangalore, IN
  • Assignee:
    International Business Machines Corporation - Armonk NY
  • International Classification:
    G06F 12/02
    G06F 11/10
  • Abstract:
    A method, system and computer program product are provided for implementing enhanced reliability of memory subsystems utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. The DRAM configuration includes a first buffer and a second buffer, each buffer including a validity counter. The validity counter for a receiving buffer is incremented as each respective data row from a transferring buffer is validated through Error Correction Code (ECC), Reliability, Availability, and Serviceability (RAS) logic and transferred to the receiving buffer, while the validity counter for the transferring buffer is decremented. Data are read from or written to either the first buffer or the second buffer based upon a respective count value of the validity counters.
  • Reference Voltage Modification In A Memory Device

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  • US Patent:
    20150228328, Aug 13, 2015
  • Filed:
    Apr 23, 2015
  • Appl. No.:
    14/694067
  • Inventors:
    - Armonk NY, US
    Joab D. Henderson - Pflugerville TX, US
    Jeffrey A. Sabrowski - Leander TX, US
    Anuwat Saetow - Austin TX, US
  • International Classification:
    G11C 11/4099
    G11C 11/4076
    G11C 11/4091
    G11C 11/406
  • Abstract:
    A method and apparatus for modifying a reference voltage between refreshes in a memory device are disclosed. The memory array may include a plurality of memory cells. The memory device may also include a sense amplifier. The sense amplifier may be configured to read data from the plurality of memory cells using a reference voltage. The memory device may also include a sense amplifier reference voltage modification circuit. The sense amplifier reference voltage modification circuit may be configured to detect a triggering event and modify the reference voltage in response to detecting a triggering event.
  • Implementing Simultaneous Read And Write Operations Utilizing Dual Port Dram

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  • US Patent:
    20150213853, Jul 30, 2015
  • Filed:
    Jan 30, 2014
  • Appl. No.:
    14/168102
  • Inventors:
    - ARMONK NY, US
    Carlos A. Fernandez - Hialeah FL, US
    Joab D. Henderson - Pflugerville TX, US
    Jeffrey A. Sabrowski - Leander TX, US
    Anuwat Saetow - Austin TX, US
    Saravanan Sethuraman - Bangalore, IN
  • Assignee:
    INTERNATIONAL BUSINESS MACHINES CORPORATION - ARMONK NY
  • International Classification:
    G11C 7/10
  • Abstract:
    A method, system and memory controller are provided for implementing simultaneous read and write operations in a memory subsystem utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. A DRAM includes a first partition and a second partition. A memory controller determines if memory requirements are above or below a usage threshold. If the memory requirements are below the usage threshold, the memory is partitioned into a read buffer and a write buffer, with writes going to the write buffer and reads coming from the read buffer, data being transferred from the write buffer to the read buffer through an Error Correction Code (ECC) engine. If the memory requirements are above the usage threshold, the entire memory is used for reads and writes.

Classmates

Jeffrey Sabrowski Photo 1

Jeffrey Sabrowski

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Schools:
Highland Elementary School Gresham OR 1976-1981, Gordon Russell Middle School Gresham OR 1981-1984
Community:
Michael Dressler
Jeffrey Sabrowski Photo 2

Highland Elementary Schoo...

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Graduates:
Javin Craig (1995-1996),
Daniel Mirehouse (1977-1982),
Jenny Johnson (1988-1993),
Eric Pizarro (1980-1985),
Jeffrey Sabrowski (1976-1981)
Jeffrey Sabrowski Photo 3

Gordon Russell Middle Sch...

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Graduates:
Jeffrey Sabrowski (1981-1984),
Michael Buss (1979-1981)

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Jeffrey Sabrowski

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Mylife

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Jeffrey Sabrowski Natial...

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