Jeffrey H Tran

US Patent:

20060166107, Jul 27, 2006

Filed:

Jan 27, 2005

Appl. No.:

11/044341

Inventors:

Xiaoyi Chen - Foster City CA, US
Michael Grimbergen - Redwood City CA, US
Madhavi Chandrachood - Sunnyvale CA, US
Jeffrey Tran - Fremont CA, US
Ajay Kumar - Cupertino CA, US
Simon Tam - Milpitas CA, US
Ramesh Krishnamurthy - Sunnyvale CA, US

International Classification:

C23F 3/00
C03C 25/68
B44C 1/22
C23F 1/00
C03C 15/00
G03F 1/00

US Classification:

430005000, 216067000, 216079000

Abstract:

A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.