Jeong E Kim

US Patent:

20190221438, Jul 18, 2019

Filed:

Mar 22, 2019

Appl. No.:

16/361514

Inventors:

- Urbana IL, US
Dane J. Sievers - Fisher IL, US
Lukas Janavicius - Champaign IL, US
Jeong Dong Kim - Hillsboro OR, US

International Classification:

H01L 21/3065
H01L 21/306
H01L 21/04
H01L 21/465

Abstract:

A method of catalyst-assisted chemical etching with a vapor-phase etchant has been developed. In one approach, a semiconductor substrate including a patterned titanium nitride layer thereon is heated, and an oxidant and an acid are evaporated to form a vapor-phase etchant comprising an oxidant vapor and an acid vapor. The semiconductor substrate and the patterned titanium nitride layer are exposed to the vapor-phase etchant during the heating of the semiconductor substrate. The vapor-phase etchant diffuses through the patterned titanium nitride layer, and titanium nitride-covered regions of the semiconductor substrate are etched. Thus, an etched semiconductor structure is formed.

US Patent:

20190019901, Jan 17, 2019

Filed:

Jul 13, 2018

Appl. No.:

16/034774

Inventors:

- Urbana IL, US
Jeong Dong Kim - Savoy IL, US
Munho Kim - Champaign IL, US

International Classification:

H01L 31/0232
H01L 31/032

Abstract:

An optoelectronic device with an antireflective surface comprises a semiconductor substrate having a textured surface including a plurality of surface protrusions and/or indentations. A first electrode is in contact with the semiconductor substrate and spaced apart from a second electrode that is also in contact with the semiconductor substrate. The textured surface is fabricated by inverse metal-assisted chemical etching, and thus the semiconductor substrate is substantially devoid of ion-induced defects.

US Patent:

20170243751, Aug 24, 2017

Filed:

Feb 24, 2017

Appl. No.:

15/441745

Inventors:

- Urbana IL, US
Jeong Dong Kim - Savoy IL, US
Munho Kim - Champaign IL, US
Lingyu Kong - Urbana IL, US

International Classification:

H01L 21/306
H01L 21/3205
H01L 21/768
H01L 21/285
H01L 21/04
H01L 21/465
H01L 21/027
H01L 21/3213

Abstract:

A method of metal-assisted chemical etching comprises forming an array of discrete metal features on a surface of a semiconductor structure, where each discrete metal feature comprises a porous metal body with a plurality of pores extending therethrough and terminating at the surface of the semiconductor structure. The semiconductor structure is exposed to an etchant, and the discrete metal features sink into the semiconductor structure as metal-covered surface regions are etched. Simultaneously, uncovered surface regions are extruded through the pores to form anchoring structures for the discrete metal features. The anchoring structures inhibit detouring or delamination of the discrete metal features during etching. During continued exposure to the etchant, the anchoring structures are gradually removed, leaving an array of holes in the semiconductor structure.