Jeremy A Theil

US Patent:

6373117, Apr 16, 2002

Filed:

May 3, 1999

Appl. No.:

09/304433

Inventors:

Jeremy A Theil - Mountain View CA

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01L 3100

US Classification:

257444, 257 72, 257448, 257449

Abstract:

A multiple-photosensor structure. The multiple-photosensor structure includes a substrate. A first photosensor is formed adjacent to the substrate. A first pixel electrode of the first photosensor is electrically connected to the substrate. A first transparent conductive layer is formed adjacent to the first photosensor. The first transparent conductive layer electrically connects a first outer electrode of the first photosensor to the substrate. A second photosensor is adjacent to the first transparent conductive layer. A second pixel electrode of the second photosensor is electrically connected to the substrate through the first transparent conductive layer. A second transparent conductive layer is adjacent to the second photosensor. The second transparent conductive layer electrically connects a second outer electrode of the second photosensor to the substrate. The multiple-photosensor structure can further include a third photosensor formed adjacent to the second transparent conductive layer.

US Patent:

6376275, Apr 23, 2002

Filed:

Aug 8, 2000

Appl. No.:

09/634026

Inventors:

Jeremy A Theil - Mountain View CA
Min Cao - Mountain View CA

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01L 2100

US Classification:

438 73

Abstract:

A self-aligned metal electrode sensor structure. The self-aligned metal electrode sensor structure includes a substrate which includes electronic circuitry. An interconnect structure is formed adjacent to the substrate. The interconnect structure includes conductive interconnect vias which pass through the interconnect structure. A sensor is formed adjacent to the interconnect structure. The sensor includes a pixel metallization section and a doped layer electrode. The pixel metallization section is electrically connected to the interconnect via. The pixel metallization section includes an outer surface which is substantially planar. The doped layer electrode includes an inner surface adjacent to the outer surface of the pixel metallization section. The entire inner surface of the doped layer electrode is substantially planar. A transparent conductive layer is formed adjacent to the sensor.

US Patent:

6384460, May 7, 2002

Filed:

Jun 7, 1999

Appl. No.:

09/326340

Inventors:

Jeremy A. Theil - Mountain View CA
Min Cao - Mountain View CA

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01L 310376

US Classification:

257444, 257 53, 257226, 257448, 257458

Abstract:

A self-aligned metal electrode sensor structure. The self-aligned metal electrode sensor structure includes a substrate which includes electronic circuitry. An interconnect structure is formed adjacent to the substrate. The interconnect structure includes conductive interconnect vias which pass through the interconnect structure. A sensor is formed adjacent to the interconnect structure. The sensor includes a pixel metallization section and a doped layer electrode. The pixel metallization section is electrically connected to the interconnect via. The pixel metallization section includes an outer surface which is substantially planar. The doped layer electrode includes an inner surface adjacent to the outer surface of the pixel metallization section. The entire inner surface of the doped layer electrode is substantially planar. A transparent conductive layer is formed adjacent to the sensor.

US Patent:

6387736, May 14, 2002

Filed:

Apr 26, 1999

Appl. No.:

09/299687

Inventors:

Min Cao - Mountain View CA
Jeremy A Theil - Mountain View CA
Gary W Ray - Mountain View CA
Dietrich W Vook - Menlo Park CA

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01L 2100

US Classification:

438149, 438 96

Abstract:

A structure and a method for providing structural stability at an interface between two poorly adhering layers in a semiconductor device involve providing anchoring channels in one of the poorly adhering layers through which the other poorly adhering layer can be anchored to a third layer. Specifically, the structure and method are applicable to a three-layer stack having a top layer of amorphous silicon, a middle layer of titanium nitride, and a bottom layer of oxide. In order to reduce susceptibility to delamination between the amorphous silicon layer and the titanium nitride layer, the anchoring channels are created in the titanium nitride layer to allow the amorphous silicon to attach to the oxide layer. Because the amorphous silicon layer and the oxide layer exhibit good adhesion between each other, delamination between the amorphous silicon layer and the titanium nitride layer is minimized.

US Patent:

6396118, May 28, 2002

Filed:

Feb 3, 2000

Appl. No.:

09/496941

Inventors:

Jeremy A. Theil - Mountain View CA
Jane Mei-Jech Lin - San Jose CA
Min Cao - Mountain View CA
Gary W. Ray - Mountain View CA
Shawming Ma - Sunnyvale CA
Xin Sun - San Jose CA

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01L 3100

US Classification:

257444, 257458, 257656, 257290, 257291, 257 59, 257 72

Abstract:

An array of active pixel sensors includes a substrate. An interconnect structure is formed adjacent to the substrate. The interconnect structure includes a plurality of conductive vias. A plurality of photo sensors are formed adjacent to the interconnect structure. Each photo sensor includes a pixel electrode. Each pixel electrode is electrically connected to the substrate through a corresponding conductive yet. A I-layer is formed over each of the pixel electrodes. The array of active pixel sensors further includes a conductive mesh formed adjacent to the photo sensors. An inner surface of the conductive mesh is electrically and physically connected to the photo sensors, and electrically connected to the substrate through a conductive via. The conductive mesh providing light shielding between photo sensors thereby reducing cross-talk between the photo sensors. The conductive mesh includes apertures that align with at least one of the pixel electrodes of the photo sensors.

US Patent:

6436488, Aug 20, 2002

Filed:

Jun 12, 2000

Appl. No.:

09/591815

Inventors:

Jeremy A Theil - Mountain View CA
Gerrit J Kooi - Sunnyvale CA
Ron P Varghese - Fort Collins CO

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H05H 124

US Classification:

427578, 427534, 427307

Abstract:

Method of depositing a layer of amorphous silicon film on a substrate at a very fast deposition rate while maintaining superior film quality. A plasma volume in a process chamber is defined. A total flow rate of a mixture of gases introduced into the chamber is also defined. The total flow rate is the sum of the flow rates of the respective gases in the mixture. Next, a process parameter that includes the plasma volume and total flow rate is defined. The process parameter is then maintained in a first predetermined relationship with a predetermined value during the deposition of the amorphous silicon film.

US Patent:

6545711, Apr 8, 2003

Filed:

Nov 2, 1998

Appl. No.:

09/184426

Inventors:

Frederick A. Perner - Palo Alto CA
Min Cao - Mountain View CA
Charles M. C. Tan - Santa Clara CA
Jeremy A. Theil - Mountain View CA

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H04N 5335

US Classification:

348294, 257459, 257233

Abstract:

An image sensor array. The image sensor array includes a substrate. An array of photo diode sensors are electrically interconnected to the substrate. The photo diode sensors conduct charge at a rate proportional to the intensity of light received by the photo diode sensors. A ring of guard diodes are located around the periphery of the array of photo diode sensors. Each guard diode has a guard diode anode connected to a predetermined guard anode voltage and a guard diode cathode connected to a static guard cathode voltage.

US Patent:

6586812, Jul 1, 2003

Filed:

Apr 13, 1999

Appl. No.:

09/290443

Inventors:

Min Cao - Mountain View CA
Jeremy A. Theil - Mountain View CA
Gary W. Ray - Mountain View CA
Dietrich W. Vook - Menlo Park CA

Assignee:

Agilent Technologies, Inc. - Palo Alto CA

International Classification:

H01L 3120

US Classification:

257443, 257 59, 257 72

Abstract:

An array of image sensors that includes ion implantation regions that provide physical isolation between the pixel electrode regions. The physical isolation reduces coupling and cross-talk between the image sensors. The array of isolated image sensors can be formed by a simple fabrication process.