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Jia J Lee

age ~72

from Castro Valley, CA

Also known as:
  • Jia Jia Lee
  • Jia Lee
  • Victoria Jia Lee
  • Jiajia Lee
  • Jia Lin
  • Jia Jia Li
  • Victoria Lee
  • Ji Lee
  • Jia Li
  • Jia Jia
3510 Timco Ct, Hayward, CA 94552(510)7330238

Jia Lee Phones & Addresses

  • 3510 Timco Ct, Castro Valley, CA 94552 • (510)7330238
  • Hayward, CA
  • San Francisco, CA
  • Alameda, CA
  • 3100 Brandywine Dr, San Jose, CA 95121
  • Richmond, CA
  • Oakland, CA
Name / Title
Company / Classification
Phones & Addresses
Jia M. Lee
Principal
Lee, Jia Ming Ca Omd
Health Practitioner's Office
1523 Irving St, San Francisco, CA 94122

Us Patents

  • Method Of Depositing Dielectric Films

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  • US Patent:
    6764958, Jul 20, 2004
  • Filed:
    Jul 28, 2000
  • Appl. No.:
    09/627667
  • Inventors:
    Srinivas D Nemani - San Jose CA
    Li-Qun Xia - Santa Clara CA
    Dian Sugiarto - Sunnyvale CA
    Ellie Yieh - San Jose CA
    Ping Xu - Fremont CA
    Jia Lee - Campbell CA
  • Assignee:
    Applied Materials Inc. - Santa Clara CA
  • International Classification:
    H01L 2131
  • US Classification:
    438758, 438763, 438931
  • Abstract:
    A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
  • Fluorine-Containing Layers For Damascene Structures

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  • US Patent:
    6777171, Aug 17, 2004
  • Filed:
    Apr 20, 2001
  • Appl. No.:
    09/839869
  • Inventors:
    Ping Xu - Fremont CA
    Jia Lee - Ossining NY
    Ishing Lou - Santa Clara CA
    Li-Qun Xia - Santa Clara CA
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    H01L 2131
  • US Classification:
    430322, 430311, 430313, 430317
  • Abstract:
    A method of forming a silicon carbide layer, a silicon nitride layer, an organosilicate layer is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a fluorine source in the presence of an electric field. The silicon nitride layer is formed by reacting a gas mixture comprising a silicon source, a nitrogen source, and a fluorine source in the presence of an electric field. The organosilicate layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, an oxygen source and a fluorine source in the presence of an electric field. The silicon carbide layer, the silicon nitride layer and the organosilicate layer are all compatible with integrated circuit fabrication processes.
  • Method Of Depositing Dielectric Films

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  • US Patent:
    7001850, Feb 21, 2006
  • Filed:
    Jul 20, 2004
  • Appl. No.:
    10/894872
  • Inventors:
    Srinivas D Nemani - San Jose CA, US
    Li-Qun Xia - Santa Clara CA, US
    Dian Sugiarto - Sunnyvale CA, US
    Ellie Yieh - San Jose CA, US
    Ping Xu - Fremont CA, US
    Jia Lee - Campbell CA, US
  • Assignee:
    Applied Materials Inc. - Santa Clara CA
  • International Classification:
    H01L 21/31
    H01L 21/469
  • US Classification:
    438758
  • Abstract:
    A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
  • Method Of Depositing Dielectric Films

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  • US Patent:
    7117064, Oct 3, 2006
  • Filed:
    Feb 21, 2006
  • Appl. No.:
    11/358793
  • Inventors:
    Srinivas D Nemani - San Jose CA, US
    Li-Qun Xia - Santa Clara CA, US
    Dian Sugiarto - Sunnyvale CA, US
    Ellie Yieh - San Jose CA, US
    Ping Xu - Fremont CA, US
    Jia Lee - Campbell CA, US
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    G06F 19/00
    C23C 16/00
    H05H 1/24
    H01L 21/31
    H01L 21/469
  • US Classification:
    700121, 427577, 42724915, 42725529, 438784
  • Abstract:
    A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
  • Integration Process For Fabricating Stressed Transistor Structure

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  • US Patent:
    7566655, Jul 28, 2009
  • Filed:
    Apr 5, 2006
  • Appl. No.:
    11/398436
  • Inventors:
    Mihaela Balseanu - Sunnyvale CA, US
    Jia Lee - San Jose CA, US
    Mei-Yee Shek - Mountain View CA, US
    Amir Al-Bayati - San Jose CA, US
    Li-Qun Xia - Santa Clara CA, US
    Hichem M'Saad - Santa Clara CA, US
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    H01L 21/44
  • US Classification:
    438653, 257E21198, 257288
  • Abstract:
    A process flow integration scheme employs one or more techniques to control stress in a semiconductor device formed thereby. In accordance with one embodiment, cumulative stress contributed by RTP of a nitride spacer and polysilicon gate, and subsequent deposition of a high stress etch stop layer, enhance strain and improve device performance. Germanium may be deposited or implanted into the gate structure in order to facilitate stress control.
  • Method To Increase Tensile Stress Of Silicon Nitride Films Using A Post Pecvd Deposition Uv Cure

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  • US Patent:
    8129290, Mar 6, 2012
  • Filed:
    Apr 7, 2006
  • Appl. No.:
    11/400275
  • Inventors:
    Mihaela Balseanu - Sunnyvale CA, US
    Michael S. Cox - Santa Clara CA, US
    Li-Qun Xia - Santa Clara CA, US
    Mei-Yee Shek - Mountain View CA, US
    Jia Lee - San Jose CA, US
    Vladimir Zubkov - Mountain View CA, US
    Rongping Wang - Cupertino CA, US
    Isabelita Roflox - Union City CA, US
    Hichem M'Saad - Santa Clara CA, US
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    H01L 21/31
    H01L 21/469
  • US Classification:
    438791, 257E21293
  • Abstract:
    High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.
  • Method To Increase Tensile Stress Of Silicon Nitride Films Using A Post Pecvd Deposition Uv Cure

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  • US Patent:
    20120196452, Aug 2, 2012
  • Filed:
    Feb 2, 2012
  • Appl. No.:
    13/365229
  • Inventors:
    Mihaela Balseanu - Sunnyvale CA, US
    Michael S. Cox - Davenport CA, US
    Li-Qun Xia - Santa Clara CA, US
    Mei-Yee Shek - Mountain View CA, US
    Jia Lee - San Jose CA, US
    Vladimir Zubkov - Mountain View CA, US
    Rongping Wang - Cupertino CA, US
    Isabelita Roflox - Union City CA, US
    Hichem M'Saad - Santa Clara CA, US
  • Assignee:
    Applied Materials, Inc. - Santa Clara CA
  • International Classification:
    H01L 21/318
  • US Classification:
    438791, 257E21293
  • Abstract:
    High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.

Resumes

Jia Lee Photo 1

Jia Lee

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Location:
San Francisco Bay Area
Industry:
Semiconductors
Jia Lee Photo 2

Project Manager

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Location:
United States
Industry:
Electrical/Electronic Manufacturing
Jia Lee Photo 3

Jia Lee

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Location:
San Francisco Bay Area
Industry:
Computer Software
Jia Lee Photo 4

Marketing Data Analyst

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Location:
San Francisco Bay Area
Industry:
Marketing and Advertising
Jia Lee Photo 5

Jia Lee

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Location:
United States

Amazon

Predicting Jim Simons. Mastering The Masters.: By David Lee Chay Tiam & Vincent Lee Jia Qing 

Predicting Jim Simons. Mastering The Masters.: BY David Lee Chay Tiam & Vincent Lee Jia Qing 

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Still learning from Warren Buffett and George Soros ? Meet The New Superman of Finance . He made 8 Billion Dollars in 5 Years . Time to Learn from the Quant King , Jim Simons . This Book tries to uncover the methods behind Jim Simons Quant Approach .The focus is on Braincapital Technologies which ha...


Author
BrainCapitaL Technologies See Tomorrow's Markets Today!, Vincent Lee Jia Qing

Binding
Kindle Edition

ISBN #
1

Flickr

Myspace

Jia Lee Photo 14

Jia Lee

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Jia Lee Photo 15

Jia Lee

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Locality:
ATLANTA, Georgia
Gender:
Male
Birthday:
1939
Jia Lee Photo 16

Jia Lee

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Locality:
Rocky Mount, North Carolina
Gender:
Female
Birthday:
1937

Googleplus

Jia Lee Photo 17

Jia Lee

Education:
中北大学成教学院 - 计算机信息管理
Jia Lee Photo 18

Jia Lee

Tagline:
안녕하세요~
Bragging Rights:
이쁨
Jia Lee Photo 19

Jia Lee

Jia Lee Photo 20

Jia Lee

Jia Lee Photo 21

Jia Lee

Jia Lee Photo 22

Jia Lee

Jia Lee Photo 23

Jia Lee

Jia Lee Photo 24

Jia Lee

News

State of the Union star Tuned into testing Police use of pepper spray questioned ...

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  • p://1.usa.gov/1IIdfLe]: New York City special education teacher Jia Lee, Harvard professor Marty West, Denver Public Schools Superintendent Tom Boasberg, New Hampshire Department of Education Deputy Commissioner Paul Leather and Leadership Conference on Civil and Human Rights CEO Wade Henderson.
  • Date: Jan 20, 2015
  • Source: Google

Youtube

Lee Jun Yen & Lee Jia Wei performing at the B...

Lee Jun Yen & Lee Jia Wei performing at the BUBS Fellowship Dinner 2008

  • Category:
    Nonprofits & Activism
  • Uploaded:
    10 Jan, 2009
  • Duration:
    7m 10s

Jess Lee / 李佳薇- 鼓聲若響

20101226 Superstar Avenue 7 Lee Jia Wei showing her capability as a ve...

  • Category:
    Entertainment
  • Uploaded:
    26 Dec, 2010
  • Duration:
    2m 6s

Vim Leej Twg Demo

for my 4th up coming album to order my projects go to my myspacepage f...

  • Category:
    Entertainment
  • Uploaded:
    05 May, 2010
  • Duration:
    4m 53s

Jess Lee Jia Wei 李佳薇 - Beautiful English & Pi...

by ryColaa Productions Jess Lee 李佳薇Lee Jia Wei Beautiful English & Pin...

  • Category:
    Music
  • Uploaded:
    20 Jan, 2013
  • Duration:
    4m 32s

German Open 2013 Highlights: Wen Jia vs Lee H...

Review all the highlights from the Wen Jia vs Lee Ho Ching Womens Sing...

  • Category:
    Sports
  • Uploaded:
    17 Nov, 2013
  • Duration:
    10m 43s

Lee Jia Xi Ballet

Credit: Music The Village Soundtrack- The Gravel Road Location Freedom...

  • Category:
    People & Blogs
  • Uploaded:
    13 Aug, 2014
  • Duration:
    1m 25s

M-Plan Testimonial - Lee Jia Xuan

M-PLAN健康见证李佳轩Melissa Lee JiaXuan (P.Penang) "在我女儿还小的时候,我就让她服用M-PLAN三基黑...

  • Category:
    Travel & Events
  • Uploaded:
    16 Oct, 2012
  • Duration:
    11m 13s

semi final 1 4 10 Lee Jia Wei

  • Category:
    News & Politics
  • Uploaded:
    18 Jun, 2013
  • Duration:
    6m 12s

Facebook

Jia Lee Photo 25

Jia Chian Lee

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Jia Lee Photo 26

Jia Zheng Lee

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Jia Lee Photo 27

Jia Cheng Lee

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Jia Lee Photo 28

Jia Lee

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Jia Lee Photo 29

Jia Cheng Lee

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Jia Lee Photo 30

Jia Chuin Lee

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Jia Lee Photo 31

Jia Syuen Lee

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Jia Lee Photo 32

Jia Lee

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Plaxo

Jia Lee Photo 33

Jia Lee

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Senior Strategic Marketing Manager at Applied Mate...

Classmates

Jia Lee Photo 34

Jia Wen Lee

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Schools:
A. R. Johnson School Augusta GA 2003-2007
Community:
Joseph Gross, Yolanda Smith, Kenneth Bellamy, Randolph Tutt
Jia Lee Photo 35

Jia Ling Lee-ko (Lee)

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Schools:
St. John's Catholic School New York NY 1991-1995
Community:
Julie Serenson, Robert Armstrong
Jia Lee Photo 36

A. R. Johnson School, Aug...

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Graduates:
Gary Johnson (1996-2000),
Tonya Brwon (2004-2008),
Gail Heath (1984-1988),
Shekyia Sharpe (1995-1999),
Steve Keefer (1984-1988),
Jia Wen Lee (2003-2007)
Jia Lee Photo 37

St. John's Catholic Schoo...

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Graduates:
Jia Ling Lee (1991-1995),
John Hamilton (2002-2006),
Monica Monica Vilela (1990-1994),
Glenn Caldit (2004-2008),
Jason Rivera (1989-1993)
Jia Lee Photo 38

Jia Lee, Class of 2011 - ...

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