Jian J Yu

US Patent:

20140070293, Mar 13, 2014

Filed:

Nov 14, 2013

Appl. No.:

14/080291

Inventors:

Damon B. Farmer - White Plains NY, US
Michael P. Chudzik - Danbury CT, US
Chengwen Pei - Danbury CT, US
Keith Kwong Hon Wong - Wappingers Falls NY, US
Jian Yu - Danbury CT, US
Zhen Zhang - Sollentuna, SE

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

International Classification:

H01L 27/108

US Classification:

257301

Abstract:

A memory device, and a method of forming a memory device, is provided that includes a capacitor with a lower electrode of a metal semiconductor alloy. In one embodiment, the memory device includes a trench present in a semiconductor substrate including a semiconductor on insulating (SOI) layer on top of a buried dielectric layer, wherein the buried dielectric layer is on top of a base semiconductor layer. A capacitor is present in the trench, wherein the capacitor includes a lower electrode of a metal semiconductor alloy having an upper edge that is self-aligned to the upper surface of the base semiconductor layer, a high-k dielectric node layer, and an upper electrode of a metal. The memory device further includes a pass transistor in electrical communication with the capacitor.

US Patent:

20210087259, Mar 25, 2021

Filed:

Dec 20, 2018

Appl. No.:

16/770840

Inventors:

- New York NY, US
Yaoxing Huang - Brooklyn NY, US
Jian Yu - New Providence NJ, US

International Classification:

C07K 16/10
C07K 16/28
A61K 39/42
A61P 31/18

Abstract:

In various embodiments, the present invention relates generally to using bispecific antibodies in the prevention and treatment of HIV.

US Patent:

20180237505, Aug 23, 2018

Filed:

Dec 21, 2017

Appl. No.:

15/850832

Inventors:

- New York NY, US
Yaoxing Huang - Brooklyn NY, US
Jian Yu - New Providence NJ, US

International Classification:

C07K 16/10
C07K 16/28

Abstract:

In various embodiments, the present invention relates generally to using bispecific antibodies in the prevention and treatment of HIV.

US Patent:

20180179299, Jun 28, 2018

Filed:

Jun 2, 2016

Appl. No.:

15/579280

Inventors:

- New York NY, US
Jian YU - New York NY, US
Xin YAO - New York NY, US
Yaoxing HUANG - New York NY, US

International Classification:

C07K 16/46
C07K 16/10
A61P 31/18

Abstract:

Provided are tri-specific fusion antibodies created to target multiple epitopes of the Human Immunodeficiency Virus (HIV). The fusion antibodies provide improved potency and breadth against HIV as compared to monospecific and bispecific antibodies, and additionally provide a high barrier against viral resistance. Also disclosed are pharmaceutical formulations and therapeutic methods utilizing such fusion proteins.

US Patent:

20170247435, Aug 31, 2017

Filed:

Jan 25, 2017

Appl. No.:

15/414822

Inventors:

- New York NY, US
Yaoxing Huang - Brooklyn NY, US
Jian Yu - New Providence NJ, US

International Classification:

C07K 16/10
C07K 16/28

Abstract:

In various embodiments, the present invention relates generally to using bispecific antibodies in the prevention and treatment of HIV.

US Patent:

20150152167, Jun 4, 2015

Filed:

Dec 2, 2014

Appl. No.:

14/558341

Inventors:

- NEW YORK NY, US
Yaoxing Huang - Brooklyn NY, US
Jian Yu - New Providence NJ, US

International Classification:

C07K 16/10
C07K 16/28

Abstract:

In various embodiments, the present invention relates generally to using bispecific antibodies in the prevention and treatment of HIV.

US Patent:

20140370671, Dec 18, 2014

Filed:

Aug 7, 2014

Appl. No.:

14/454041

Inventors:

- Armonk NY, US
Zhengwen Li - Scarsdale NY, US
Chengwen Pei - Danbury CT, US
Jian Yu - Danbury CT, US

International Classification:

H01L 23/62
H01L 21/768
H01L 21/285
H01L 23/525
H01L 21/8238
H01L 21/02

US Classification:

438210, 438467

Abstract:

An electrical fuse has an anode contact on a surface of a semiconductor substrate. The electrical fuse has a cathode contact on the surface of the semiconductor substrate spaced from the anode contact. The electrical fuse has a link within the substrate electrically interconnecting the anode contact and the cathode contact. The link comprises a semiconductor layer and a silicide layer. The silicide layer extends beyond the anode contact. An opposite end of the silicide layer extends beyond the cathode contact. A silicon germanium region is embedded in the semiconductor layer under the silicide layer, between the anode contact and the cathode contact.