Vipul Patel - Upper Holland PA, US Scott Miller - Doylestown PA, US Mehul Shah - Lansdale PA, US Jian Yu - Warrington PA, US
Assignee:
Time Warner Cable Inc. - New York NY
International Classification:
H04L 12/66
US Classification:
370352
Abstract:
Methods and apparatus for providing unified access to interactive media applications and services in a network. In one embodiment, the network comprises a content-based network such as a cable television or satellite network, and the applications are disposed at the network headend. A servlet is provided to facilitate communication between the applications and client devices. The servlet acts as a proxy for applications utilizing a different content format than the client devices. The applications obtain data from e. g. , an internet host server via a gateway device. The client application(s) may comprise Enhanced TV Binary Interchange Format (EBIF) pages, and are configured so as to permit use via a common interface (e. g. , the user's set top box and television display). These client applications enable a user to, for example, search the internet for data relating to displayed content, post and navigate micro-blogs, instant messaging or SMS, making telephone calls (e. g.
Digital Set-Top Terminal With Partitioned Hard Disk And Associated System And Method
Vipul Patel - Upper Holland PA, US Jian Yu - Warrington PA, US Jack Miller - Huntington Valley PA, US John Callahan - Broomfield CO, US
Assignee:
Time Warner Cable Inc - Stamford CT
International Classification:
H04N 7/173
US Classification:
725114, 725131
Abstract:
A video content system includes a server module, a video content network coupled to the server module, and a digital set-top terminal coupled to the video content network. The digital set-top terminal in turn includes a processor; an interface coupled to the processor and the video content network; and a memory module. The memory module has at least a partitioned hard disk with a first partition containing digital video programming received over the video content network, and a second partition containing supplemental resources.
Method For Forming Metal Semiconductor Alloys In Contact Holes And Trenches
Christian Lavoie - Ossining NY, US Zhengwen Li - Danbury CT, US Ahmet S. Ozcan - Pleasantville NY, US Filippos Papadatos - Wappingers Falls NY, US Chengwen Pei - Danbury CT, US Jian Yu - Danbury CT, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 29/78 H01L 21/336
US Classification:
257288, 438293, 257E29271, 257E21425
Abstract:
A method of forming a semiconductor device is provided that includes forming a first metal semiconductor alloy on a semiconductor containing surface, forming a dielectric layer over the first metal semiconductor alloy, forming an opening in the dielectric layer to provide an exposed surface the first metal semiconductor alloy, and forming a second metal semiconductor alloy on the exposed surface of the first metal semiconductor alloy. In another embodiment, the method includes forming a gate structure on a channel region of a semiconductor substrate, forming a dielectric layer over at least a source region and a drain region, forming an opening in the dielectric layer to provide an exposed surface the semiconductor substrate, forming a first metal semiconductor alloy on the exposed surface of the semiconductor substrate, and forming a second metal semiconductor alloy on the first metal semiconductor alloy.
Trench Silicide Contact With Low Interface Resistance
International Business Machines Corporation - Armonk NY, US Jeffrey B. Johnson - Essex Junction VT, US Zhengwen Li - Danbury CT, US Jian Yu - Danbury CT, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 21/768
US Classification:
438303
Abstract:
An electrical structure is provided that includes a dielectric layer present on a semiconductor substrate and a via opening present through the dielectric layer.An interconnect is present within the via opening. A metal semiconductor alloy contact is present in the semiconductor substrate. The metal semiconductor alloy contact has a perimeter defined by a convex curvature relative to a centerline of the via opening. The endpoints for the convex curvature that defines the metal semiconductor alloy contact are aligned to an interface between a sidewall of the via opening, a sidewall of the interconnect and an upper surface of the semiconductor substrate.
Replacement Gate Mosfet With A High Performance Gate Electrode
International Business Machines Corporation - Armonk NY, US Dechao Guo - Wappinger Falls NY, US Randolph F. Knarr - Albany NY, US Chengwen Pei - Danbury CT, US Gan Wang - Fishkill NY, US Yanfeng Wang - Fishkill NY, US Keith Kwong Hon Wong - Wappingers Falls NY, US Jian Yu - Danbury CT, US Jun Yuan - San Diego CA, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 29/78
US Classification:
257410
Abstract:
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.
Self-Aligned Bottom Plate For Metal High-K Dielectric Metal Insulator Metal (Mim) Embedded Dynamic Random Access Memory
Damon B. Farmer - White Plains NY, US Michael P. Chudzik - Danbury CT, US Chengwen Pei - Danbury CT, US Keith Kwong Hon Wong - Wappingers Falls NY, US Jian Yu - Danbury CT, US Zhen Zhang - Sollentuna, SE
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 27/108
US Classification:
257301
Abstract:
A memory device, and a method of forming a memory device, is provided that includes a capacitor with a lower electrode of a metal semiconductor alloy. In one embodiment, the memory device includes a trench present in a semiconductor substrate including a semiconductor on insulating (SOI) layer on top of a buried dielectric layer, wherein the buried dielectric layer is on top of a base semiconductor layer. A capacitor is present in the trench, wherein the capacitor includes a lower electrode of a metal semiconductor alloy having an upper edge that is self-aligned to the upper surface of the base semiconductor layer, a high-k dielectric node layer, and an upper electrode of a metal. The memory device further includes a pass transistor in electrical communication with the capacitor.
A playlist server application is provided on a server at a first network node. A playlist local application is provided for a remote device. An indication of a change to a playlist on one of the server and the remote device is obtained from a corresponding one of the playlist server application and the playlist local application. The change is synchronized to another one of the server and the remote device.
Medicine Doctors
Dr. Jian Q Yu, Philadelphia PA - MD (Doctor of Medicine)
333 Cottman Ave, Philadelphia, PA 19111 (215)7286900 (Phone)
Certifications:
Nuclear Medicine, 2003
Awards:
Healthgrades Honor Roll
Languages:
English Chinese
Hospitals:
333 Cottman Ave, Philadelphia, PA 19111
Fox Chase Cancer Center 333 Cottman Avenue, Philadelphia, PA 19111
Education:
Medical School Beijing Medical University Graduated: 1987 Medical School Hahnemann University Hospital Graduated: 2001 Medical School Hahnemann University Hospital Graduated: 2002 Medical School Hospital University Pa Graduated: 2003 Medical School Hospital University Pa Graduated: 2005
Jian C Yu MD 227 Mt Pleasant Rd STE 1, Hauppauge, NY 11788 (631)3600005 (phone), (631)3681113 (fax)
Education:
Medical School China Med Coll, Taichung, Taiwan (385 05 Prior 1/71) Graduated: 1969
Procedures:
Colonoscopy Destruction of Lesions on the Anus Hemorrhoid Procedures Laparoscopic Gallbladder Removal Proctosigmoidoscopy Small Bowel Resection
Conditions:
Benign Polyps of the Colon Anal Fissure Anal or Rectal Abscess Gastrointestinal Hemorrhage Hemorrhoids
Languages:
English
Description:
Dr. Yu graduated from the China Med Coll, Taichung, Taiwan (385 05 Prior 1/71) in 1969. He works in Hauppauge, NY and specializes in Colon & Rectal Surgery and Gastroenterology. Dr. Yu is affiliated with North Shore University Hospital and Saint Catherine Of Siena Medical Center.
Fox Chase Cancer Center 333 Cottman Ave, Philadelphia, PA 19111 (215)7286900 (phone), (215)7282773 (fax)
Education:
Medical School Beijing Med Univ, Beijing City, Beijing, China Graduated: 1987
Languages:
English
Description:
Dr. Yu graduated from the Beijing Med Univ, Beijing City, Beijing, China in 1987. He works in Philadelphia, PA and specializes in Diagnostic Radiology and Nuclear Medicine. Dr. Yu is affiliated with Fox Chase Cancer Center and Temple University Hospital.
Jian Yu, Philadelphia PA
Work:
Fox Chase Cancer Center
333 Cottman Ave, Philadelphia, PA 19111
Wen Hua Farm Inc General Crop Farm · General Farms, Primarily Crop
1905 Abbey Rd, West Palm Beach, FL 33415 8232 180 Ave, Town of Loxahatchee Groves, FL 33470 6458 Bell Blvd, Flushing, NY 11364 3 Hathaway Ln, North Hills, NY 11030