Jiang Dong Lu from Alpharetta, GA, age 71

Cobalt Deposition On Barrier Surfaces
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US Patent:

20090053426, Feb 26, 2009
Filed:

Aug 29, 2008
Appl. No.:

12/201976
Inventors:

JIANG LU - Santa Clara CA, US
Paul Ma - Santa Clara CA, US
Seshadri Ganguli - Sunnyvale CA, US
Joseph F. Aubuchon - San Jose CA, US
Sang Ho Yu - Cupertino CA, US
Murali K. Narasimhan - San Jose CA, US
International Classification:

B05D 5/12
B05D 3/06
US Classification:

427540, 427124, 205186
Abstract:

Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.

Method For Tuning A Deposition Rate During An Atomic Layer Deposition Process
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US Patent:

20100062149, Mar 11, 2010
Filed:

May 13, 2009
Appl. No.:

12/465471
Inventors:

Paul Ma - Santa Clara CA, US
Joseph F. Aubuchon - San Jose CA, US
Jiang Lu - Santa Clara CA, US
Mei Chang - Saratoga CA, US
Assignee:

APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:

B05D 5/12
US Classification:

4271261
Abstract:

Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).

Formation Of Iii-V Materials Using Mocvd With Chlorine Cleans Operations
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US Patent:

20130005118, Jan 3, 2013
Filed:

Jun 28, 2012
Appl. No.:

13/535845
Inventors:

Sung Won Jun - Cupertino CA, US
Yan Wang - Sunnyvale CA, US
Hua Chung - San Jose CA, US
Jiang Lu - Milpitas CA, US
Kuan Chien Keris Shen - Santa Clara CA, US
Shiva Rai - Champaign IL, US
International Classification:

H01L 21/205
US Classification:

438478, 257E21112
Abstract:

Methods of forming III-V materials using metal organic chemical vapor deposition (MOCVD) with chlorine cleans operations are described. A chlorine-clean operation may further season an MOCVD process for improved throughput for high volume manufacturing.

Fabrication Of Light Emitting Diodes (Leds) Using A Degas Process
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US Patent:

20130023079, Jan 24, 2013
Filed:

Jul 18, 2012
Appl. No.:

13/552344
Inventors:

Sang Won Kang - San Jose CA, US
Jiang Lu - Milpitas CA, US
Hua Chung - San Jose CA, US
Juno Yu-Ting Huang - Santa Clara CA, US
International Classification:

H01L 33/04
US Classification:

438 46, 257E33008
Abstract:

Methods of fabricating light emitting diodes using a degas process are described. For example, a method includes providing a partially formed group III-V material layer stack of an LED. Contaminants are removed from the partially formed group III-V material layer stack by a degas process. Formation of the group III-V material layer stack of the LED is then completed.

Apparatus For Depositing Metal Films With Plasma Treatment
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US Patent:

20200020509, Jan 16, 2020
Filed:

Sep 23, 2019
Appl. No.:

16/578602
Inventors:

- Santa Clara CA, US
HYMAN W.H. LAM - SAN JOSE CA, US
JOHN C. FORSTER - MOUNTAIN VIEW CA, US
JIANG LU - MILPITAS CA, US
CAN XU - SAN JOSE CA, US
DIEN-YEH WU - SAN JOSE CA, US
PAUL F. MA - SANTA CLARA CA, US
MEI CHANG - SARATOGA CA, US
International Classification:

H01J 37/32
C23C 16/513
C23C 16/505
C23C 16/52
C23C 16/455
Abstract:

Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.

Deposition Of Cobalt Films With High Deposition Rate
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US Patent:

20180350826, Dec 6, 2018
Filed:

Jun 1, 2018
Appl. No.:

15/995693
Inventors:

- Santa Clara CA, US
Jing Zhou - San Jose CA, US
Fuqun Grace Vasiknanonte - Sunnyvale CA, US
Jiang Lu - Milpitas CA, US
Paul F. Ma - Santa Clara CA, US
Nobuyuki Sasaki - Santa Clara CA, US
Sree Rangasai V. Kesapragada - Union City CA, US
Sang Ho Yu - Cupertino CA, US
Mei Chang - Saratoga CA, US
International Classification:

H01L 27/11551
H01L 27/11578
H01L 21/822
H01L 21/8229
H01L 21/8239
H01L 21/285
Abstract:

Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.

Cobalt Oxide Film Deposition
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US Patent:

20180340255, Nov 29, 2018
Filed:

May 25, 2018
Appl. No.:

15/989827
Inventors:

- Santa Clara CA, US
Jacqueline S. Wrench - San Jose CA, US
Jiang Lu - Milpitas CA, US
Paul F. Ma - Santa Clara CA, US
Mei Chang - Saratoga CA, US
International Classification:

C23C 16/40
H01L 21/02
C23C 16/455
Abstract:

Embodiments of the invention provide methods of depositing a CoOx film at lower processing temperatures and with a higher deposition rate. The methods disclosed herein use cobalt tricarbonyl compounds to form the CoOx film. Both atomic layer deposition and chemical vapor deposition techniques are useful in depositing the CoOx film.

Cobalt Manganese Vapor Phase Deposition
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US Patent:

20180240755, Aug 23, 2018
Filed:

Apr 23, 2018
Appl. No.:

15/960440
Inventors:

- Santa Clara CA, US
Paul F. Ma - Santa Clara CA, US
Jiang Lu - Milpitas CA, US
Ben-Li Sheu - Sunnyvale CA, US
International Classification:

H01L 23/532
C23C 16/455
C23C 16/34
H01L 21/285
H01L 21/768
Abstract:

Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.