Jie Bai

age ~50

from Wellesley Hills, MA

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Also known as:

Jie Dai
Jie Crafts
Jie Wang
St Rt Crafts
St Jie Crafts

Connected to:

Jie Bai Phones & Addresses

Wellesley Hills, MA
Vero Beach, FL
330 Crafts St, Newtonville, MA 02460
Newton, MA
Watertown, MA
Waltham, MA
Brookline, MA
Dorchester, MA
11 Garnet St, Watertown, MA 02472

Education

School / High School:

Chicago-Kent College of Law

Ranks

Licence:

New York - Due to reregister within 30 days of birthday
Date:

2009

License Records

Jie Bai

Address:

Newtonville, MA 02460

License #:

9524214 - Expired

Issued Date:

Jul 18, 2012

Expiration Date:

Sep 7, 2014

Type:

Salesperson

Lawyers & Attorneys

Jie Bai - Lawyer

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Licenses:

New York - Due to reregister within 30 days of birthday 2009

Education:

Chicago-Kent College of Law

Name / Title

Company / Classification

Phones & Addresses

Jie Bai
Treasurer

Bosgen Inc
Business Consulting Services

330 Crafts St, Newton, MA 02460

Jie Bai
Director

BOSTON BIOINFORMATICS CONSULTING INC

330 Crafts St, Newtonville, MA 02460

Us Patents

Formation Of Devices By Epitaxial Layer Overgrowth
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US Patent:

8034697, Oct 11, 2011
Filed:

Sep 18, 2009
Appl. No.:

12/680872
Inventors:

James Fiorenza - Wilmington MA, US
Anthony Lochtefeld - Ipswich MA, US
Jie Bai - Bedford MA, US
Ji-Soo Park - Methuen MA, US
Jennifer Hydrick - Kingston NH, US
Jizhong Li - Bordentown NJ, US
Zhiyuan Cheng - Lincoln MA, US
Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd. - Hsin-Chu
International Classification:

H01L 21/20
H01L 21/36
US Classification:

438481, 257E2109, 438 94
Abstract:

Methods and structures are provided for formation of devices, e. g. , solar cells, on substrates including, e. g. , lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.

Defect Reduction Using Aspect Ratio Trapping
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US Patent:

8173551, May 8, 2012
Filed:

Sep 7, 2007
Appl. No.:

11/852078
Inventors:

Jie Bai - Salem NH, US
Ji-Soo Park - Methuen MA, US
Anthony J. Lochtefeld - Somerville MA, US
Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd. - Hsin-Chu
International Classification:

H01L 21/31
US Classification:

438758, 257E2109
Abstract:

Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.

Formation Of Devices By Epitaxial Layer Overgrowth
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US Patent:

8384196, Feb 26, 2013
Filed:

Sep 23, 2011
Appl. No.:

13/243521
Inventors:

Zhiyuan Cheng - Lincoln MA, US
James Fiorenza - Wilmington MA, US
Jennifer M. Hydrick - Kingston NH, US
Anthony J. Lochtefeld - Ipswich MA, US
Ji-Soo Park - Methuen MA, US
Jie Bai - Bedford MA, US
Jizhong Li - Bordentown NJ, US
Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd. - Hsin-Chu
International Classification:

H01L 29/06
US Classification:

257618, 257E27112, 257E29003, 257E29004, 257E29022, 257E31002, 257622, 257623, 257628
Abstract:

Methods and structures are provided for formation of devices on substrates including, e. g. , lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.

Defect Reduction Using Aspect Ratio Trapping
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US Patent:

20120199876, Aug 9, 2012
Filed:

Apr 13, 2012
Appl. No.:

13/446612
Inventors:

Jie Bai - Salem NH, US
Ji-Soo Park - Methuen MA, US
Anthony J. Lochtefeld - Ipswich MA, US
Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. - Hsin-Chu
International Classification:

H01L 29/06
US Classification:

257190, 257E29024
Abstract:

Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.