Jin Fang Lu

US Patent:

7754612, Jul 13, 2010

Filed:

Mar 14, 2007

Appl. No.:

11/686079

Inventors:

Jin Lu - Manassas VA, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438692, 257E21224, 257E21228, 257E2123, 257E21307, 438690, 438753

Abstract:

Methods and apparatuses for removing polysilicon material from a semiconductor workpiece are disclosed. A particular method includes contacting a polishing pad with a semiconductor workpiece having a surface polysilicon material. The method also includes disposing a polishing liquid between the polysilicon material and the polishing pad. The polishing liquid contains an oxidizer that does not include metal elements. The method further includes moving at least one of the semiconductor workpiece and the polishing pad relative to the other while the semiconductor workpiece contacts the polishing pad and the polishing liquid. At least some of the polysilicon material is removed while the polysilicon material contacts the oxidizer in the polishing liquid, as at least one of the semiconductor workpiece and the polishing pad moves relative to the other.

US Patent:

8071480, Dec 6, 2011

Filed:

Jun 17, 2010

Appl. No.:

12/818019

Inventors:

Jin Lu - Manassas VA, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438692, 257E21224, 257E21228, 257E2123, 257E21307, 438690, 438753

Abstract:

Methods and apparatuses for removing polysilicon material from a semiconductor workpiece are disclosed. A particular method includes contacting a polishing pad with a semiconductor workpiece having a surface polysilicon material. The method also includes disposing a polishing liquid between the polysilicon material and the polishing pad. The polishing liquid contains an oxidizer that does not include metal elements. The method further includes moving at least one of the semiconductor workpiece and the polishing pad relative to the other while the semiconductor workpiece contacts the polishing pad and the polishing liquid. At least some of the polysilicon material is removed while the polysilicon material contacts the oxidizer in the polishing liquid, as at least one of the semiconductor workpiece and the polishing pad moves relative to the other.