Jin Young Park

US Patent:

6734452, May 11, 2004

Filed:

Apr 3, 2001

Appl. No.:

09/825875

Inventors:

Sarath Gunapala - Valencia CA
John K. Liu - Pasadena CA
Jin S. Park - Cerritos CA
Mani Sundaram - Pasadena CA

Assignee:

California Institute of Technology - Pasadena CA

International Classification:

H01L 2906

US Classification:

257 17, 257 21, 257 22, 257184, 257185, 438 57, 438 73, 438 74, 438 77, 2503384, 25033902

Abstract:

An Al Ga As/GaAs/Al Ga As quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as the âtopâ (i. e. , the upper-most energy barrier) of the quantum well. The energy barrier for thermionic emission is thus equal to the energy required for intersubband absorption. Increasing the energy barrier in this way reduces dark current. The amount of photocurrent generated by the quantum well is maintained at a high level.

US Patent:

20030131857, Jul 17, 2003

Filed:

Jan 16, 2002

Appl. No.:

10/047396

Inventors:

Hong Kim - Los Angeles CA, US
Jin Park - Los Angeles CA, US
Soo Oh - Northridge CA, US

International Classification:

A24B015/00

US Classification:

131/359000

Abstract:

A composition of material for manufacturing nicotine free cigarette substitutes. The composition of material of this invention, maintaining the taste and flavor of cigarette, without tobacco leaf, is composed of including but not limited to leaf powder of Samilax China L and leaf powder of Gomphrena Globosa L. The cigarette substitute of this invention is manufactured and packed like normal cigarettes, 20 cigarettes per pack. The substitute emits no nicotine and no class A carcinogenic substances when inhaled by a human. The cigarette substitute has good cancer-resistance. It cures the harmful effecrs to a human body due to poison such as heavy metals of mercury, nickel, and cadmium imposed by use of regular cigarettes. The substitute of this invention helps to quit smoking and eliminates the poisons from the blood of the pre-smokers.

US Patent:

56482973, Jul 15, 1997

Filed:

May 21, 1996

Appl. No.:

8/646795

Inventors:

Jin S. Park - Gardena CA
Sarath D. Gunapala - Valencia CA
Eric W. Jones - Los Angeles CA
Hector M. Del Castillo - Pasadena CA

Assignee:

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

International Classification:

H01L 3100
H01L 2144

US Classification:

437178

Abstract:

Extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime have been demonstrated for the first time. This result was achieved by incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p+ doping spike and the Schottky image force. The p+ doping spikes were grown by molecular beam epitaxy at 450 degrees Celsius using elemental boron as the dopant source, with doping concentrations ranging from 1. times. 10. sup. 19 to 1. times. 10. sup. 21 cm. sup. -3. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p+ spikes.

US Patent:

53571193, Oct 18, 1994

Filed:

Feb 19, 1993

Appl. No.:

8/019719

Inventors:

Kang L. Wang - Santa Monica CA
Jin S. Park - Gardena CA

Assignee:

Board of Regents of the University of California - Oakland CA

International Classification:

H01L 2712

US Classification:

257 18

Abstract:

Carrier mobility in a heterojunction field effect device is increased by reducing or eliminating alloy scattering. The active channel region of the field effect device uses alternating layers of pure silicon and germanium which form a short period superlattice with the thickness of each layer in the superlattice being no greater than the critical thickness for maintaining a strained heterojunction. The gate contact of the field effect device can comprise quantum Si/Ge wires which provide quantum confinement in the growth plane, thereby allowing the field effect device to further improve the mobility by restricting phonon scattering. The structure can be used to improve device speed performance.

US Patent:

62115294, Apr 3, 2001

Filed:

Jan 17, 1997

Appl. No.:

8/785350

Inventors:

Sarath Gunapala - Valencia CA
John K. Liu - Pasadena CA
Jin S. Park - Cerritos CA
Mani Sundaram - Pasadena CA

Assignee:

California Institute of Technology - Pasadena CA

International Classification:

H01L 2906
H01L 310328
H01L 310336

US Classification:

257 17

Abstract:

An Al. sub. x Ga. sub. 1-x As/GaAs/Al. sub. x Ga. sub. 1-x As quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as the "top" (i. e. , the upper-most energy barrier) of the quantum well. The energy barrier for thermionic emission is thus equal to the energy required for intersubband absorption. Increasing the energy barrier in this way reduces dark current. The amount of photocurrent generated by the quantum well is maintained at a high level.