Jin Won Park

US Patent:

20030131857, Jul 17, 2003

Filed:

Jan 16, 2002

Appl. No.:

10/047396

Inventors:

Hong Kim - Los Angeles CA, US
Jin Park - Los Angeles CA, US
Soo Oh - Northridge CA, US

International Classification:

A24B015/00

US Classification:

131/359000

Abstract:

A composition of material for manufacturing nicotine free cigarette substitutes. The composition of material of this invention, maintaining the taste and flavor of cigarette, without tobacco leaf, is composed of including but not limited to leaf powder of Samilax China L and leaf powder of Gomphrena Globosa L. The cigarette substitute of this invention is manufactured and packed like normal cigarettes, 20 cigarettes per pack. The substitute emits no nicotine and no class A carcinogenic substances when inhaled by a human. The cigarette substitute has good cancer-resistance. It cures the harmful effecrs to a human body due to poison such as heavy metals of mercury, nickel, and cadmium imposed by use of regular cigarettes. The substitute of this invention helps to quit smoking and eliminates the poisons from the blood of the pre-smokers.

US Patent:

56482973, Jul 15, 1997

Filed:

May 21, 1996

Appl. No.:

8/646795

Inventors:

Jin S. Park - Gardena CA
Sarath D. Gunapala - Valencia CA
Eric W. Jones - Los Angeles CA
Hector M. Del Castillo - Pasadena CA

Assignee:

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

International Classification:

H01L 3100
H01L 2144

US Classification:

437178

Abstract:

Extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime have been demonstrated for the first time. This result was achieved by incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p+ doping spike and the Schottky image force. The p+ doping spikes were grown by molecular beam epitaxy at 450 degrees Celsius using elemental boron as the dopant source, with doping concentrations ranging from 1. times. 10. sup. 19 to 1. times. 10. sup. 21 cm. sup. -3. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p+ spikes.