Jin Young Song

US Patent:

8642369, Feb 4, 2014

Filed:

Mar 3, 2009

Appl. No.:

12/397224

Inventors:

Jizhi Zhang - Arcadia CA, US
Jin Joo Song - Brea CA, US

Assignee:

ZN Technology, Inc. - Brea CA

International Classification:

H01L 21/00

US Classification:

438 47, 438104, 257E33064

Abstract:

A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula ZnMgCdBeOSSe, wherein a=01, b=01, c=01, p=01, and q=01.

US Patent:

20060160345, Jul 20, 2006

Filed:

Jan 14, 2005

Appl. No.:

11/036081

Inventors:

Xing-Quan Liu - Brea CA, US
Huoping Xin - Brea CA, US
Jin Song - Brea CA, US
Thomas Choo - Brea CA, US

International Classification:

H01L 29/22
H01L 21/28
H01L 31/0296

US Classification:

438604000, 257078000

Abstract:

A method to achieve high quality III-nitride epitaxial layers including AlN, AlGaN, GaN, InGaN, and AlInGaN, by supplying group III precursors constantly and group V precursors periodically with the epitaxial growth systems including metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), and molecular beam epitaxy (MBE).

US Patent:

20070029541, Feb 8, 2007

Filed:

Aug 4, 2005

Appl. No.:

11/196856

Inventors:

Huoping Xin - Brea CA, US
Xingquan Liu - Brea CA, US
Xiaohong Shi - Brea CA, US
Chan Choi - Brea CA, US
Jin Song - Brea CA, US

International Classification:

H01L 31/109

US Classification:

257014000

Abstract:

A highly efficient III-nitride/II-Oxide light emitting device that has a n-tunneling layer, which comprises at least one material selected from a group consisting of n-GaN, n-InGaN, n-AlGaN, n-AlGaInN, n-ZnO, n-ZnCdO, n-ZnMgO, n-ZnMgCdO, that is deposited on top of the p-layer in a LED structure. After that, a top n-layer is deposited above that n-tunneling layer that may be a n-layer and comprises at least one material selected from a group consisting of n-GaN, n-InGaN, n-AlGaN, n-AlGaInN, n-ZnO, n-ZnCdO, n-ZnMgO, n-ZnMgCdO or a top n-layer may also be a n-layer and comprises at least one material selected from a group consisting of n-GaN, n-InGaN, n-AlGaN, n-AlGaInN, n-ZnO, n-ZnCdO, n-ZnMgO, n-ZnMgCdO so that the top n-layer is made highly conductive and show very rough surface.

US Patent:

20120088862, Apr 12, 2012

Filed:

Oct 7, 2010

Appl. No.:

12/899805

Inventors:

Siamanto Abrami - Glendale CA, US
Jin Song - Stevenson Ranch CA, US
Guangliang Tang - Stevenson Ranch CA, US

International Classification:

C09D 163/00
C09D 175/04

US Classification:

523435

Abstract:

Diethylene glycol monomethyl ether resistant coatings include a base component including a sulfur-containing, epoxy functional polyol, and an activator component including an isocyanate curing agent.

US Patent:

20120119203, May 17, 2012

Filed:

Nov 11, 2010

Appl. No.:

12/944227

Inventors:

Jizhi Zhang - Walnut CA, US
Jin Joo Song - Brea CA, US

International Classification:

H01L 29/22
H01B 1/10

US Classification:

257 43, 2525194, 257E29094

Abstract:

A p-type group II-VI semiconductor may include a group IV element as a dopant. The group II-IV semiconductor may be ZnMgCdBeOSSe, wherein a=01, b=01, c=01, p=01 and q=01.

US Patent:

20150008461, Jan 8, 2015

Filed:

Feb 3, 2014

Appl. No.:

14/171696

Inventors:

- Brea CA, US
Jin Joo Song - Brea CA, US

Assignee:

ZN Technology, Inc. - Brea CA

International Classification:

H01L 33/00
H01L 33/50
H01L 33/46

US Classification:

257 94

Abstract:

A light emitting diode (LED) with a vertical structure, including electrical contacts on opposing sides, provides increased brightness. In some embodiments an LED includes a nitride semiconductor light emitting component grown on a sapphire substrate, a Zn(Mg,Cd,Be)O(S,Se) assembly formed on the nitride semiconductor component, and a further Zn(Mg,Cd,Be)O(S,Se) assembly bonded on an opposing side of the light emitting component, which is exposed by removing the sapphire substrate. Electrical contacts may be connected to the Zn(Mg,Cd,Be)O(S,Se) assembly and the further Zn(Mg,Cd,Be)O(S,Se) assembly. Herein Zn(Mg,Cd,Be)O(S,Se) is a II-VI semiconductor satisfying a formula ZnMgCdBeOSSe, wherein a=01, b=01, c=01, p=01, and q=01.