Jin C Zheng

US Patent:

20060115919, Jun 1, 2006

Filed:

Nov 30, 2004

Appl. No.:

11/000547

Inventors:

Bishnu Gogoi - Scottsdale AZ, US
Jin Zheng - Houghton MI, US

International Classification:

H01L 21/00
H01L 21/302

US Classification:

438050000, 438052000, 438053000, 438741000

Abstract:

A method of making a microelectromechanical (MEM) device using a standard silicon wafer, rather than an SOI wafer, includes selectively implanting a dopant in regions of the standard wafer, to thereby form heavily doped regions therein. The heavily doped regions are then converted to porous silicon regions. An electrical isolation layer is selectively deposited on the wafer and over a portion of one or more of the porous silicon regions. An epitaxial layer is grown over the porous silicon regions and the electrical isolation area, and device elements are formed in the epitaxial layer. Thereafter, at least portions of the porous silicon regions are removed, to thereby release the formed device elements.