Jing Lu

US Patent:

6787951, Sep 7, 2004

Filed:

Oct 1, 2001

Appl. No.:

09/966102

Inventors:

Boris A. Maslov - Reston VA
Alexander V. Pyntikov - Ashburn VA
Jing Lu - Herndon VA

Assignee:

Wavecrest Laboratories, LLC - Dulles VA

International Classification:

H02K 1100

US Classification:

310 67R, 310216, 310218, 310259

Abstract:

A rotary electric motor is formed within a cylindrical rotor housing structure that surrounds an annular stator ring. The permanent magnet rotor is configured in an annular ring coaxial with, and outside of, the stator. The stator ring contains a plurality of wound core segments that are ferromagnetically isolated from each other. The core segments are secured to a rigid skeletal structure that is centrally fixed to a stationary shaft. The stator support structure is formed of spine members that extend radially away from the center. U-shaped plates at the outer ends of the spine members engage adjacent pair of stator segments. Within the inner periphery of the stator ring, space is provided within which motor control circuitry and battery power supply may be incorporated.

US Patent:

8316797, Nov 27, 2012

Filed:

Jun 16, 2009

Appl. No.:

12/456388

Inventors:

Jes Asmussen - East Lansing MI, US
Timothy Grotjohn - Okemos MI, US
Donnie K. Reinhard - East Lansing MI, US
Thomas Schuelke - Brighton MI, US
M. Kagan Yaran - Lansing MI, US
Kadek W. Hemawan - East Lansing MI, US
Michael Becker - East Lansing MI, US
David King - Lansing MI, US
Yajun Gu - Lansing MI, US
Jing Lu - East Lansing MI, US

Assignee:

Board of Trustees of Michigan State University Fraunhofer USA - East Lansing, Plymouth MI

International Classification:

C23C 16/00
C23F 1/00
H01L 21/306

US Classification:

118723MW, 118723 ME, 118723 MR, 15634535, 15634536, 15634541

Abstract:

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

US Patent:

20130069531, Mar 21, 2013

Filed:

Oct 22, 2012

Appl. No.:

13/657366

Inventors:

BOARD OF TRUSTEES OF MICHIGAN STATE U - East Lansing MI, US
FRAUNHOFER USA - Plymouth MI, US
Donnie K. Reinhard - East Lansing MI, US
Thomas Schuelke - Brighton MI, US
M. Kagan Yaran - Lansing MI, US
Kadek W. Hemawan - East Lansing MI, US
Michael Becker - East Lansing MI, US
David King - Lansing MI, US
Yajun Gu - Lansing MI, US
Jing Lu - East Lansing MI, US

Assignee:

FRAUNHOFER USA - Plymouth MI
BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY - East Lansing MI

International Classification:

H05H 1/46

US Classification:

31511121

Abstract:

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

US Patent:

20130101730, Apr 25, 2013

Filed:

Oct 22, 2012

Appl. No.:

13/657353

Inventors:

Board of Trustees of Michigan State University - East Lansing MI, US
Fraunhofer USA - Plymouth MI, US
Donnie K. Reinhard - East Lansing MI, US
Thomas Schuelke - Brighton MI, US
M. Kagan Yaran - Lansing MI, US
Kadek W. Hemawan - East Lansing MI, US
Michael Becker - East Lansing MI, US
David King - Lansing MI, US
Yajun Gu - Lansing MI, US
Jing Lu - East Lansing MI, US

Assignee:

FRAUNHOFER USA - Plymouth MI
BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY - East Lansing MI

International Classification:

C23C 16/511

US Classification:

427 9, 427575, 118723 MW

Abstract:

New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.

US Patent:

20200216960, Jul 9, 2020

Filed:

Dec 2, 2019

Appl. No.:

16/700046

Inventors:

- East Lansing MI, US
Jing Lu - East Lansing MI, US
Yajun Gu - Boise ID, US
Shreya Nad - Hillsboro OR, US

International Classification:

C23C 16/511
H01J 37/32
C23C 16/52
C23C 16/27

Abstract:

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state. Additional processes are directed to realtime process control during deposition, in particular based on identified independent process variables which can effectively control desired dependent process variables during deposition while still maintaining a well-matched power coupling reactor state.

US Patent:

20170183778, Jun 29, 2017

Filed:

May 22, 2015

Appl. No.:

15/313250

Inventors:

- East Lansing MI, US
Jing Lu - East Lansing MI, US
Yajun Gu - Boise ID, US
Shreya Nad - Hillsboro OR, US

International Classification:

C23C 16/511
C23C 16/52
H01J 37/32
C23C 16/27

Abstract:

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state. Additional processes are directed to realtime process control during deposition, in particular based on identified independent process variables which can effectively control desired dependent process variables during deposition while still maintaining a well-matched power coupling reactor state.