Global Practices International Trade Customs and Export Controls International Trade and Immigration
ISLN:
921175139
University:
Fudan University, M.A., 2002; The Johns Hopkins University - Nanjing University Center for Chinese and American Studies, International Economics and International Relations, M.A., 2004; Zhejiang University, B.A., 1999
Name / Title
Company / Classification
Phones & Addresses
Jing Zhu President
Hong Hillo USA, Inc Business Services at Non-Commercial Site
901 6 Ave, Whittier, CA 91745
Jing Zhu President
J Z L Global Corporation
1010 S Atlantic Blvd, Alhambra, CA 91803
Jing Hua Zhu President
AIR PACIFIC INSTRUMENTS, INC
12921 Ramona Blvd #E, Baldwin Park, CA 91706 12921 Ramona Blvd, Duarte, CA 91706
- Chandler AZ, US Jing Zhu - Santa Monica CA, US Steven Schell - Torrance CA, US
Assignee:
Microchip Technology Incorporated - Chandler AZ
International Classification:
H01L 27/02 H01L 29/778 H01L 27/06
Abstract:
A multi-gate Schottky depletion-mode field effect transistor (FET), at least one diode and two resistors comprise a compact electrostatic discharge (ESD) protection structure. This ESD protection structure can be laid out in a smaller area than typical multiple diode ESD devices. The multi-gate FET may comprise various types of high-electron-mobility transistor (HEMT) devices, e.g., (pseudomorphic) pHEMT, (metamorphic) mHEMT, induced HEMT. The multiple gates of the Schottky field effect device are used to form an ESD trigger and charge draining paths for protection of circuits following the ESD protection device. Both single and dual polarity ESD protection devices may be provided on an integrated circuit die for protection of input-output circuits thereof.
- Chandler AZ, US Jing Zhu - Santa Monica CA, US Steven Schell - Torrance CA, US
International Classification:
H01L 27/06 H01L 29/778
US Classification:
257195
Abstract:
A multi-gate Schottky depletion-mode field effect transistor (FET), at least one diode and two resistors comprise a compact electrostatic discharge (ESD) protection structure. This ESD protection structure can be laid out in a smaller area than typical multiple diode ESD devices. The multi-gate FET may comprise various types of high-electron-mobility transistor (HEMT) devices, e.g., (pseudomorphic) pHEMT, (metamorphic) mHEMT, induced HEMT. The multiple gates of the Schottky field effect device are used to form an ESD trigger and charge draining paths for protection of circuits following the ESD protection device. Both single and dual polarity ESD protection devices may be provided on an integrated circuit die for protection of input-output circuits thereof.
Sep 2014 to 2000 ConsultantAPEC Business Advisory Council
May 2014 to Nov 2014 ConsultantRyan Herco Flow Solutions Burbank, CA Jun 2014 to Jul 2014 Internal ConsultantSino Matters Ltd.
Oct 2007 to Jun 2013 VP of Finance and OperationsMedia Planner
Jun 2006 to Jul 2007 Media PlannerJewelry E-commerce
Jan 2006 to Jun 2006 Founder
Education:
University of Southern California, Marshall School of Business Los Angeles, CA 2013 to 2015 Master of Business Administration in Operations, FinanceRenmin University 2002 to 2006 Bachelor of Arts in English Language and Literature
Skills:
R, JMP, MS Project, Advanced Excel, Powerpoint; Mandarin.